Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

被引：3
作者：
Su, Wenjia [1 ]
Zhang, Zhen [1 ]
Li, Jiulong [2 ]
Guan, Zhicheng [1 ]
Li, Jiaqi [1 ]
机构：
[1] Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang, Peoples R China
[2] Wuhan Univ, Inst Technol Sci, Wuhan, Peoples R China
来源：
SILICON | 2023年 / 15卷 / 09期
关键词：
Directional solidification method; Silicon; Size upgrade; Oxygen and carbon impurities; Numerical simulation; Solar cells; DIRECTIONAL SOLIDIFICATION PROCESS; INSULATION PARTITION; CRYSTALLINE; DESIGN; TRANSPORT; FURNACE; INGOT; PV;
D O I：
10.1007/s12633-023-02323-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidification of silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidification furnaces are studied. The simulation results show that the distributions of oxygen and carbon impurities change significantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.
引用
收藏
页码：4127 / 4135
页数：9
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