Mg implantation in AlN layers on sapphire substrates

被引：2

作者：

Okumura, Hironori ^{[1
]}

Uedono, Akira ^{[1
]}

机构：

[1] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / 02期

关键词：

AlN; implantation; Mg acceptor; electrical property; positron-annihilation spectroscopy; thermal diffusion; surface morphology; GAN;

D O I：

10.35848/1347-4065/acb898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg ions were implanted in 1 mu m thick AlN layers grown on sapphire substrates. The Mg implantation with a total dose of 5 x 10(14) cm(-2) introduced Al-vacancy related defects, which were decreased by annealing at temperatures over 1400 degrees C in an N-2 ambient. We found that annealing temperatures over 1400 degrees C were necessary for an electrically conductive Mg-implanted AlN layer. The Mg-implanted AlN layer annealed at 1500 degrees C showed 1.1 nA at a bias of 100 V at room temperature and 7 nA at a bias of 10 V at 300 degrees C.

引用

页数：5

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