High-speed deposition of silicon nitride thick films via halide laser chemical vapor deposition

被引:3
作者
Tu, Rong [1 ,2 ,3 ]
Liu, Zhen [1 ]
Xu, Qingfang [1 ]
Zhang, Song [1 ]
Li, Qizhong [1 ]
Zhang, Xian [3 ]
Kosinova, Marina L. [4 ]
Goto, Takashi [1 ,5 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Guangdong Lab, Chaozhou Branch, Chem & Chem Engn, Chaozhou 521000, Peoples R China
[3] Wuhan Univ Technol, Adv Engn Technol Res Inst, Zhongshan 528400, Peoples R China
[4] Russian Acad Sci, Nikolaev Inst Inorgan Chem, Siberian Branch, 3 Acad Lavrerntiev Pr, Novosibirsk 630090, Russia
[5] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai 9808579, Japan
基金
中国国家自然科学基金; 对外科技合作项目(国际科技项目);
关键词
Silicon nitride films; Laser chemical vapor deposition; Deposition rate; Hardness; Electrical resistivity; HOT-WIRE CVD; MECHANICAL-PROPERTIES; AMORPHOUS-SILICON; LOW-TEMPERATURE; HIGH-PURITY; CERAMICS; SI3N4; BEHAVIOR; COATINGS; CARBIDE;
D O I
10.1016/j.jeurceramsoc.2023.04.035
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon nitride shows significant potential in the field of surface protection for electronic devices owing to its excellent insulation performance and mechanical properties. In this study, silicon nitride films were fabricated via halide laser chemical vapor deposition (LCVD). The effects of deposition parameters on the crystallinity, microstructure, deposition rate (R-dep), Vickers microhardness, nano-hardness and electrical resistivity were investigated. The maximum R-dep of the silicon nitride thick films was 972 mu m/h at T-dep of 1573 K and Ptot of 10 kPa, which is the highest value compared with those obtained via conventional CVD. As T-dep increased, the Vickers microhardness and nano-hardness of the films increased to the highest value of 25.1 GPa and 34.8 GPa at 1573 K, respectively. The electrical resistivity of the films decreased with increasing T-dep and showed a maximum value of 1.49 x 10(14) Omega center dot cm at T-dep of 1273 K.
引用
收藏
页码:5214 / 5222
页数:9
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