Structural and optical properties of Zn-implanted silica: effect of fluence and annealing

被引:0
|
作者
Makhavikou, M. A. [1 ]
Milchanin, O., V [1 ]
Parkhomenko, I. N. [2 ]
Vlasukova, L. A. [2 ]
Komarov, F. F. [1 ]
Yuvchenko, V. N. [1 ]
Wendler, E. [3 ]
Korolev, D. S. [4 ]
Mudryi, A., V [5 ]
Zhivulko, V. D. [5 ]
van Vuuren, A. Janse [6 ]
机构
[1] Belarusian State Univ, AN Sevchenko Inst Appl Phys Problems, Minsk 220045, BELARUS
[2] Belarusian State Univ, Minsk 220030, BELARUS
[3] Friedrich Schiller Univ Jena, Inst Solid State Phys, Jena, Germany
[4] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[5] Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
[6] Nelson Mandela Metropolitan Univ, Ctr High Resolut Transmiss Electron Microscopy, ZA-6001 Port Elizabeth, South Africa
关键词
silicon oxide; implantation; zinc oxide; zinc silicate; transmission electron microscopy; electron diffraction; ION-IMPLANTATION; PHOTOLUMINESCENCE; NANOPARTICLES; SIO2; LUMINESCENCE; SIMULATION; CENTERS; BAND;
D O I
10.1088/1361-6463/acdc37
中图分类号
O59 [应用物理学];
学科分类号
摘要
The phase-structural composition of silica films grown on Si substrates implanted with different fluences of Zn ions has been studied using transmission electron microscopy (TEM) and electron diffraction. Small clusters (2-3 nm) and larger clusters (5-7 nm) were formed in the as-implanted silica films with Zn concentration of 6-8 at % and 16%-18%, respectively. Furnace annealing at 750 & DEG;C for two hours in air resulted in the formation of an orthorhombic Zn2SiO4 phase (space group R-3) in the case of low fluence (5 x 10(16) cm(-2)) and in the formation of a zinc blended ZnO phase (space group F-43m) in the case of high fluence (1 x 10(17) cm(-2)). Based on the Rutherford backscattering spectrometry (RBS) data, it has been shown that impurity losses during implantation and subsequent annealing increase with the fluence of the implanted ions. The photoluminescence data were consistent with the TEM and RBS.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] STRUCTURAL AND OPTICAL PROPERTIES OF Zn-IMPLANTED SILICA: EFFECT OF FLUENCE AND ANNEALING
    Makhavikou, Maxim A.
    Milchanin, Oleg, V
    Parkhomenko, Irina N.
    Komarov, Fadei F.
    Vlasukova, Liudmila A.
    Korolev, Dmitriy S.
    Mudryi, Alexander, V
    Zhivulko, Vadim D.
    van Vuuren, Arno Janse
    DOKLADY NATSIONALNOI AKADEMII NAUK BELARUSI, 2020, 64 (03): : 273 - 281
  • [2] Willemite photoluminescence in Zn-implanted silica glasses
    Zatsepin, Anatoly
    Buntov, Evgeny
    Kortov, Vsevolod
    Gavrilov, Nikolai
    Fitting, Hans-Joachim
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 12, 2015, 12 (12): : 1355 - 1358
  • [3] Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions
    Xiang Xia
    Chen Meng
    Chen Mei-Yan
    Zu Xiao-Tao
    Zhu Sha
    Wang Lu-Min
    CHINESE PHYSICS B, 2010, 19 (01)
  • [4] Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence
    Kling, A
    Soares, JC
    Rodríguez, A
    Rodríguez, T
    Avella, M
    Jiménez, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 650 - 652
  • [5] Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions
    向霞
    陈猛
    陈美艳
    祖小涛
    朱莎
    王鲁闽
    Chinese Physics B, 2010, (01) : 551 - 556
  • [6] Effect of annealing on structural and optical properties of ZnS nanocrystals
    Murali, G.
    Reddy, D. Amaranatha
    Poornaprakash, B.
    Vijayalakshmi, R. P.
    Rao, N. Madhusudhana
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (09): : 928 - 931
  • [7] Effect of annealing on structural and optical properties of lead tungstate microcrystals
    Pang Hua-Feng
    Li Zhi-Jie
    Xiang Xia
    Zhang Chun-Lai
    Fu Yong-Qing
    Zu Xiao-Tao
    CHINESE PHYSICS B, 2011, 20 (11)
  • [8] Effects of Thermal Annealing on the Structural and Optical Properties of Carbon-Implanted SiO2
    Poudel, P. R.
    Paramo, J. A.
    Poudel, P. P.
    Diercks, D. R.
    Strzhemechny, Y. M.
    Rout, B.
    McDaniel, F. D.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (03) : 1835 - 1842
  • [9] Effects of the annealing atmosphere on the electrical properties of low-power pulsed-laser annealed Zn-implanted InP
    Pizzuto, C
    Vitali, G
    Zollo, G
    Kalitzova, M
    VACUUM, 2000, 58 (2-3) : 516 - 522
  • [10] Effect of post-annealing on structural and optical properties, and elemental distribution in heavy Eu-implanted ZnO thin films
    Sakaguchi, Isao
    Ohgaki, Takeshi
    Adachi, Yutaka
    Hishita, Shunichi
    Ohashi, Naoki
    Haneda, Hajime
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2010, 118 (1383) : 1087 - 1089