Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction

被引：1

作者：

Zeng, Xiangyu ^{[1
,2
]}

Ye, Ge ^{[3
,4
]}

Yang, Fazhi ^{[5
,6
]}

Ye, Qikai ^{[7
]}

Zhang, Liang ^{[8
]}

Ma, Boyang ^{[7
]}

Liu, Yulu ^{[7
]}

Xie, Mengwei ^{[3
,4
]}

Han, Genquan ^{[1
,2
]}

Hao, Yue ^{[1
,2
]}

Luo, Jikui ^{[7
]}

Lu, Xin ^{[3
,4
]}

Liu, Yan ^{[1
,2
]}

Wang, Xiaozhi ^{[7
]}

机构：

[1] Xidian Univ, Hangzhou Inst Technol, Hangzhou 311200, Peoples R China

[2] Xidian Univ, Sch Microelect, State Key Discipline, Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

[3] Zhejiang Univ, Ctr Correlated Matter, Hangzhou 310027, Peoples R China

[4] Chinese Acad Sci, Dept Phys, Beijing 100190, Peoples R China

[5] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[6] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[7] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China

[8] Res Ctr Humanoid Sensing & Percept, Zhejiang Lab, Hangzhou 311100, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2023年 / 15卷 / 49期

基金：

浙江省自然科学基金; 中国国家自然科学基金; 国家重点研发计划;

关键词：

magnetic tunnel junction; magnetic proximityeffect; magnetoresistance enhancement; van der Waalsheterojunction; SPIN VALVES;

D O I：

10.1021/acsami.3c15363

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum similar to 17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer's superconducting critical temperature (T-C) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near T-C but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics' properties and the achievement of spin-based integrated circuits.

引用

页码：57397 / 57403

页数：7

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