共 42 条
Novel Ku/K-Band low-power LNAs with simultaneous input impedance and noise matching
被引:4
作者:
Hazeri, Ali Reza
[1
]
机构:
[1] Islamic Azad Univ, Dept Elect & Elect Engn, Kermanshah Branch, Kermanshah, Iran
关键词:
CMOS;
Integrated circuits;
Low noise amplifiers;
K-band amplifier;
Ku-band LNA;
UWB LNA;
CMOS UWB LNA;
COMMON-GATE;
AMPLIFIER;
TECHNOLOGY;
FIGURE;
GAIN;
D O I:
10.1007/s11276-023-03346-0
中图分类号:
TP [自动化技术、计算机技术];
学科分类号:
0812 ;
摘要:
In this article, three novel low-power and voltage Ku/K-band low noise amplifiers (LNAs) are proposed and designed. These three LNAs have an identical structure. The excellent simultaneous noise and input impedance matching are prevailed by employing a high-pass filter in front of the input port. This high-pass filter has two resonance frequencies under RLC load addressing simultaneous noise and input impedance matching. A capacitive shunt-shunt feedback and the inductive source degeneration as well as the common-source amplifier are applied to design the filter. The proposed LNAs consist of two stages and each stage takes advantage of the current-reused configuration. By shunt and series peaking technique, broadband, high and flat gains are achieved. The first, second, and third LNAs are adapted for functioning in Ku-band (12-18 GHz), K-band (18-26.5 GHz), and Ku/K-band (11-28 GHz), respectively. Because of excellent power linearity and low-power design, a low supply voltage of 1.2 V is chosen for LNAs by Volterra series analysis. The proposed LNAs have S-11 and S-22 parameters lower than - 10 dB, noise figures better than 2.5 dB, and S-21 parameters greater than 9 dB. The power consumption of the first, second and third LNA are only 8.2, 13.8, and 11 mW; respectively. The excellent IIP3 of the Ku/K-band LNA is - 5 dBm. By applying group delay analysis, perfect group delay variations of the LNAs are better than +/- 15 ps.
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页码:2733 / 2746
页数:14
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