On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs

被引：6

作者：

Liu, Chao ^{[1
]}

Chen, Xinghuan ^{[1
]}

Sun, Ruize ^{[1
,2
]}

Lai, Jingxue ^{[1
]}

Chen, Wanjun ^{[1
,2
]}

Xin, Yajie ^{[1
]}

Wang, Fangzhou ^{[1
,2
]}

Wang, Xiaoming ^{[1
,2
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] UESTC, Inst Elect & Informat Engn, Dongguan 523808, Guangdong, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2023年 / 38卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Dynamic R-on; GaN high electron mobility transistors (HEMTs); impact ionization (II); unclamped-inductive-switching (UIS); DEVICES; VOLTAGE;

D O I：

10.1109/TPEL.2023.3276316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the abnormal reduction and recovery of dynamic R-ON are observed under unclamped-inductive-switching (UIS) stress in Schottky p-GaN gate HEMTs. The reduction of R-ON_dyn exhibits a positive dependence on UIS stress (V-PEAK, peak voltage). With the help of Sentaurus simulation, the underlying physical mechanism is revealed. During UIS stress, the e-h pairs generated by impact ionization can be trapped, and the detrapping of electrons is faster than holes because of the lower time constant, which results in the reduction of R-ON_dyn. Furthermore, a mathematic model of R-ON_dyn after UIS stress is developed and verified by measurement. This work could provide practical guidance for the UIS operation setup to reduce the RON and conduction loss of GaN HEMTs.

引用

页码：9347 / 9350

页数：4

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