Bioresistive random access memory with an in-memory computing function based on graphene quantum dots

被引：1
作者：
Wang, Lu [1 ,2 ]
Wang, Yuting [1 ,2 ]
Yang, Jing [1 ,2 ]
Li, Wenhao [1 ,2 ]
Wen, Dianzhong [1 ,2 ]
机构：
[1] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Peoples R China
[2] Heilongjiang Univ, Heilongjiang Prov Key Lab Micronano Sensit Devices, Harbin 150080, Peoples R China
来源：
NEW JOURNAL OF CHEMISTRY | 2023年 / 47卷 / 19期
基金：
中国国家自然科学基金;
关键词：
DATA-STORAGE; PERFORMANCE; BEHAVIOR; DEVICES; PROTEIN; LOGIC;
D O I：
10.1039/d3nj00076a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Al/PMMA/SY : GQDs/PMMA/ITO devices with multilayer structures were fabricated by imbedding PMMA at both ends of soybean (SY) and graphene quantum dot (GQD) dielectric layers, which not only improved the stability of the devices but also reduced the threshold voltage and power consumption. A single unit of the device can complete the logical "AND" and "OR" operations to realize the memory calculation, which provides a new way to overcome the memory bottleneck of computer systems.
引用
收藏
页码：9459 / 9463
页数：5
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