Ultrasonic non-destructive evaluation of w-GaSe at different temperatures

The present work includes non-destructive evaluation of mechanical, thermal and ultrasonic properties of inorganic semiconducting wurtzite gallium selenide (w-GaSe) material using Lenard Jones's potential approach at different temperatures. For elastic and mechanical properties, second-order elastic constants (SOECs), elastic moduli, anisotropy factors are estimated within the temperature range of 300-1500K. The ultrasonic and thermo-physical properties are calculated within the same temperature range utilising estimated SOECs, density and lattice parameters of the chosen material. The elastic, mechanical, and ultrasonic properties of the chosen semiconducting material have been found to decrease with an increase in temperature. The obtained results have been compared and analysed for justification and to explore the inherent properties of GaSe for semiconductor manufacturing industries. Evaluation of lattice parameters, density, elastic constants, ultrasonic velocity, Debye average velocity, Debye temperature, specific heat, thermal energy density, thermal conductivity and thermal relaxation time of w-GaSe at 300-1500K.Elastic constants, ultrasonic velocities and Debye temperature of w-GaSe decay with increase in temperature.Specific heat and thermal energy density are found to increase with increase in temperature for w-GaSe.The re-establishment time for thermal phonons reduces with temperature.The ultrasonic attenuation due to phonon-phonon interaction in w-GaSe will decrease with temperature.