Influence of a magnetic field and temperature on the oscillations of the combined density of states in two-dimensional semiconductor materials

被引：7

作者：

Erkaboev, U. I. ^{[1
]}

Rakhimov, R. G. ^{[1
,2
]}

Mirzaev, J. I. ^{[1
]}

Negmatov, U. M. ^{[1
]}

Sayidov, N. A. ^{[1
]}

机构：

[1] Namangan Inst Engn & Technol, Namangan 160115, Uzbekistan

[2] Namangan Engn Construction Inst, Namangan 160103, Uzbekistan

来源：

INDIAN JOURNAL OF PHYSICS | 2024年 / 98卷 / 01期

关键词：

Semiconductor; Density of states; Magnetic field; Temperature; Quantum well;

D O I：

10.1007/s12648-023-02803-y

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, the dependence of the oscillation of the combined density of states on a strong magnetic field in heterostructures based on a rectangular quantum well is studied. The effect of a quantizing magnetic field on the temperature dependence of the combined density of states in nanoscale straight-band heterostructures is investigated. A new mathematical model has been developed for calculating the temperature dependence of the two-dimensional combined density of quantum well states in quantizing magnetic fields. The proposed model explains the experimental results in nanoscale straight-band semiconductors with a parabolic dispersion law.

引用

页码：189 / 197

页数：9

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