Performance up-gradation of CIGS solar cell using Ag2S quantum dot as buffer layer

Ag2S quantum dot as buffer layer having non-toxicity and large bandgap enhances solar cell performance, significantly improving the light absorption in the short wavelength region. This study uses numerical modeling to analyze the impact of thickness, defect density, and doping concentration variation on solar cell performances. The proposed solar cell structure comprises Cu (In1-x Ga-x) Se-2 (CIGS) material as the absorber layer and quantum dot Ag2S material as the buffer layer. The bandgap of CIGS is optimized to 1.08 eV to increase the efficacy of solar cells. The device's optimal performance is achieved in this work with a maximum power conversion efficiency of 26.12%. Furthermore, the study examines the effect of temperature and series-shunt resistance on the solar cell's performance metrics. This concept paves the way for future advancements in such systems. This article uses the 1D-SCAPS program tool to optimize the solar cell's performance.