ZnSnN2 Schottky barrier solar cells

被引：3
作者：
Ye, Fan [1 ,2 ]
Hong, Rui-Tuo [1 ,2 ]
He, Cang-Shuang [1 ,2 ]
Zhao, Zi-Cheng [1 ,2 ]
Xie, Yi-Zhu [1 ,2 ]
Zhang, Dong-Ping [1 ,2 ]
Wang, Fan [1 ,2 ]
Li, Jian-Wei [1 ,2 ]
Cai, Xing-Min [1 ,2 ]
机构：
[1] Shenzhen Univ, Key Lab Optoelect Devices, Minist Educ, Shenzhen 518060, Guangdong, Peoples R China
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2024年 / 300卷
关键词：
ZnSnN2; Schottky; Solar cell; CAPACITANCE; STATES; MOBILITY; DIODES;
D O I：
10.1016/j.mseb.2023.117097
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron density of ZnSnN2 fabricated by different deposition methods is usually much higher than its conduction band density of states and this hinders its device application. By increasing the Zn/Sn atomic ratio of the alloy target, ZnSnN2 with electron density of 1016 cm-3 is fabricated. The obtained ZnSnN2 and silver deposited with radio-frequency sputtering can form Schottky contact which shows photovoltaic effects. The voltage-and frequency-dependent capacitance of the Schottky diodes is further studied. The interface between the Ag-ZnSnN2 is abrupt with interface states of about 1013 eV-1 & sdot;cm- 2 as revealed by the capacitance-voltage curves. The midgap density of states of ZnSnN2 is found to be constant.
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页数：6
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