A 140-220-GHz Low-Noise Amplifier With 6-dB Minimum Noise Figure and 80-GHz Bandwidth in 130-nm SiGe BiCMOS

被引：13

作者：

Mehta, Yash ^{[1
]}

Thomas, Sidharth ^{[1
]}

Babakhani, Aydin ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 02期

关键词：

G-band; low noise amplifier (LNA); mm-Wave; noise figure (NF); receiver; wireless communication; WR5; Y-factor;

D O I：

10.1109/LMWC.2022.3208204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents an ultra-broadband low-noise amplifier (LNA) with a 3-dB bandwidth of 80 GHz, covering the entire WR5 frequency band (140-220 GHz). Broadband gain and noise performance are obtained through optimal bias selection, dc coupling, and stagger tuning. Y-factor noise figure (NF) measurement results are presented. A NF of 6.9, 6.1, and 8.2 dB is measured at 150, 180, and 210 GHz. Implemented in IHP 130-nm SiGe BiCMOS process, the LNA has a peak gain of 15.5 dB, while consuming 46-mW dc power.

引用

页码：200 / 203

页数：4

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