Near-infrared light emission from aluminum-doped tantalum-oxide thin films prepared using a simple co-sputtering method

被引：0

作者：

Miura, Kenta ^{[1
]}

Omi, Kosuke ^{[1
]}

机构：

[1] Gunma Univ, Grad Sch Sci & Technol, 1-5-1 Tenjin Cho, Kiryu 3768515, Japan

来源：

RESULTS IN PHYSICS | 2024年 / 57卷

关键词：

Tantalum oxide; Aluminum; Thin film; Near-infrared light emission; Co-sputtering;

D O I：

10.1016/j.rinp.2024.107389

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated aluminum-doped tantalum-oxide (Ta2O5:Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 degrees C without rare-earth elements. The NIR light emission is thought to be due to the superposition of three emission peaks around wavelengths of 800, 870, and 950 nm, and X-ray diffraction analyses revealed that the origin of the NIR light emission is related to AlTaO4 present in the Ta2O5:Al thin film.

引用

页数：3

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