High-speed, low-voltage, small-pitch and robust OTFT-based integrated gate driver for active-matrix displays

被引:2
作者
Wu, Wanming [1 ,2 ,3 ]
Geng, Di [1 ,2 ,3 ]
Chen, Chuanke [1 ,2 ,3 ]
Chuai, Xichen [1 ,2 ,3 ]
Li, Shuai [1 ,2 ,3 ]
Lu, Nianduan [1 ,2 ,3 ]
Li, Ling [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Inst Microelect, State Key Lab Fabricat Technol Integrated Circuits, 3 Beitucheng West Rd, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Lab Microelect Devices & Integrated Technol, 3 Beitucheng West Rd, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
Gate driver on array (GOA); Organic thin-film transistors (OTFTs); Depletion mode; High speed; THIN-FILM TRANSISTORS;
D O I
10.1016/j.orgel.2023.106939
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We design and fabricate a high-speed, low-voltage, small-pitch, and robust integrated gate driver with organic thin-film transistors (OTFTs). The dual-gate OTFT devices have a field effect mobility of 0.78 cm2/Vs, and on/off current ratio above 108. A single stage of the gate driver consists of ten TFTs and two capacitors, with small pitch of 244 mu m. The fabricated circuit has a minimum pulse width of 5 mu s, which is compatible with full-high definition (FHD, 1920 x 1080) active-matrix displays with 60Hz frame rate. It can work at input swing of as low as 10V, with VGH2, VGH1, and VGL of 5V, 0V, and -10V respectively. With the threshold voltage shift under positive and negative bias stress, the gate driver shows output signals without significant degradation and demonstrates its high reliability through simulation.
引用
收藏
页数:6
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