Enhancing Room-temperature Photoluminescence from Erbium-doped Silicon by Fabricating Nanopillars in a Silicon-on-Insulator Layer

被引：0

作者：

Takahashi, Yuma ^{[1
]}

Ishii, Tomoki ^{[1
]}

Uchida, Kaisei ^{[1
]}

Zushi, Takumi ^{[1
]}

Coe, Lindsay ^{[1
]}

Sato, Shin-ichiro ^{[2
]}

Pratic, Enrico ^{[3
,4
]}

Shinada, Takahiro ^{[5
]}

Tanii, Takashi ^{[1
]}

机构：

[1] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[2] Natl Inst Quantum & Radiol Sci & Technol, Takasaki, Gumma 3701292, Japan

[3] CNR, Ist Foton & Nanotecnol, Piazza Leonardo Da Vinci 32, I-20133 Milan, Italy

[4] Univ Milan, Dipartimento Fis, Via Celoria 16, I-20133 Milan, Italy

[5] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2023年 / 21卷 / 04期

关键词：

Erbium; Near-infrared photoluminescence; Silicon nanopillar; ELECTROLUMINESCENCE; CENTERS;

D O I：

10.1380/ejssnt.2023-041

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

To enhance the photoluminescence (PL) from erbium-doped silicon, nanopillars were fabricated in a silicon-on-insulator (SOI) layer with erbium and oxygen. Photoluminescence measurements at room temperature demonstrated that a nanopillar with the diameter of 1435 nm exhibits the highest near-infrared PL from erbium atoms, which is 2.0 times higher than that from an unstructured erbium-doped SOI layer. Optical simulations revealed that the PL enhancement is mainly due to the resonance absorption of excitation light at the wavelength of 785 nm. The results show the potential of nanostructure fabrication for enhancing the near-infrared PL intensity.

引用

页码：262 / 266

页数：5

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