Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing

被引：5

作者：

Mulder, Liesbeth ^{[1
]}

van de Glind, Hanne ^{[1
]}

Brinkman, Alexander ^{[1
]}

Concepcion, Omar ^{[1
,2
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] Forschungszentrum Juelich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany

来源：

NANOMATERIALS | 2023年 / 13卷 / 04期

关键词：

topological insulator; smooth surfaces; molecular beam epitaxy; in situ thermal post anneal; (Bi1-xSbx)(2)Te-3; MOLECULAR-BEAM EPITAXY; GROWTH;

D O I：

10.3390/nano13040763

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)(2)Te-3 films deposited by molecular beam epitaxy on Al2O3 (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

引用

页数：12

共 40 条

[11] Topological insulator: Spintronics and quantum computations [J].

He, Mengyun ;

Sun, Huimin ;

He, Qing Lin .

FRONTIERS OF PHYSICS, 2019, 14 (04)

[12] Highly tunable electron transport in epitaxial topological insulator (Bi1-xSbx)2Te3 thin films [J].

He, Xiaoyue ;

Guan, Tong ;

Wang, Xiuxia ;

Feng, Baojie ;

Cheng, Peng ;

Chen, Lan ;

Li, Yongqing ;

Wu, Kehui .

APPLIED PHYSICS LETTERS, 2012, 101 (12)

[13]

Hofer K., 2017, THESIS TECHNISCHE U

[14] Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks [J].

Jalil, Abdur Rehman ;

Schueffelgen, Peter ;

Valencia, Helen ;

Schleenvoigt, Michael ;

Ringkamp, Christoph ;

Mussler, Gregor ;

Luysberg, Martina ;

Mayer, Joachim ;

Gruetzmacher, Detlev .

NANOMATERIALS, 2023, 13 (02)

[15] Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films [J].

Kampmeier, Joern ;

Borisova, Svetlana ;

Plucinski, Lukasz ;

Luysberg, Martina ;

Mussler, Gregor ;

Gruetzmacher, Detlev .

CRYSTAL GROWTH & DESIGN, 2015, 15 (01) :390-394

[16] Free-electron creation at the 60° twin boundary in Bi2Te3 [J].

Kim, Kwang-Chon ;

Lee, Joohwi ;

Kim, Byung Kyu ;

Choi, Won Young ;

Chang, Hye Jung ;

Won, Sung Ok ;

Kwon, Beomjin ;

Kim, Seong Keun ;

Hyun, Dow-Bin ;

Kim, Hyun Jae ;

Koo, Hyun Cheol ;

Choi, Jung-Hae ;

Kim, Dong-Ik ;

Kim, Jin-Sang ;

Baek, Seung-Hyub .

NATURE COMMUNICATIONS, 2016, 7

[17] MBE growth optimization of topological insulator Bi2Te3 films [J].

Krumrain, J. ;

Mussler, G. ;

Borisova, S. ;

Stoica, T. ;

Plucinski, L. ;

Schneider, C. M. ;

Gruetzmacher, D. .

JOURNAL OF CRYSTAL GROWTH, 2011, 324 (01) :115-118

[18] The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator [J].

Li, H. D. ;

Wang, Z. Y. ;

Kan, X. ;

Guo, X. ;

He, H. T. ;

Wang, Z. ;

Wang, J. N. ;

Wong, T. L. ;

Wang, N. ;

Xie, M. H. .

NEW JOURNAL OF PHYSICS, 2010, 12

[19] Pulsed-laser epitaxy of topological insulator Bi2Te3 thin films [J].

Liao, Zhaoliang ;

Brahlek, Matthew ;

Ok, Jong Mok ;

Nuckols, Lauren ;

Sharma, Yogesh ;

Lu, Qiyang ;

Zhang, Yanwen ;

Lee, Ho Nyung .

APL MATERIALS, 2019, 7 (04)

[20] Anomalous finite size effects on surface states in the topological insulator Bi2Se3 [J].

Linder, Jacob ;

Yokoyama, Takehito ;

Sudbo, Asle .

PHYSICAL REVIEW B, 2009, 80 (20)

← 1 2 3 4 →