Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing

被引：5

作者：

Mulder, Liesbeth ^{[1
]}

van de Glind, Hanne ^{[1
]}

Brinkman, Alexander ^{[1
]}

Concepcion, Omar ^{[1
,2
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] Forschungszentrum Juelich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany

来源：

NANOMATERIALS | 2023年 / 13卷 / 04期

关键词：

topological insulator; smooth surfaces; molecular beam epitaxy; in situ thermal post anneal; (Bi1-xSbx)(2)Te-3; MOLECULAR-BEAM EPITAXY; GROWTH;

D O I：

10.3390/nano13040763

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)(2)Te-3 films deposited by molecular beam epitaxy on Al2O3 (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

引用

页数：12

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