Pressureless manufacturing of high purity Ti3AlC2 MAX phase material: Synthesis and characterisation

被引:15
作者
Desai, Vyom [1 ,2 ]
Shrivastava, Aroh [1 ]
Zala, Arunsinh [1 ]
Parekh, Tejas [1 ]
Gupta, Surojit [3 ]
Jamnapara, N. I. [1 ,2 ]
机构
[1] Inst Plasma Res Bhat, Gandhinagar 382428, India
[2] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400094, India
[3] Univ North Dakota, Dept Mech Engn, Grand Forks, ND USA
关键词
Pressureless sintering; MAX phase; Powder metallurgy; Characterisation; Ti3AlC2; RAY PHOTOELECTRON-SPECTROSCOPY; HIGH-TEMPERATURE OXIDATION; SELECTIVE OXIDATION; THERMAL-STABILITY; AL; TI2ALC; TI; CERAMICS; ALUMINUM; TI3SIC2;
D O I
10.1016/j.vacuum.2023.112221
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reported study involves the synthesis of high purity layered ternary carbide Ti3AlC2 MAX phase material by mixing the TiH2, Al and TiC powders in a planetary ball mill followed by two step pressureless sintering in flowing Argon (Ar) atmosphere. XRD and Raman analysis confirms the presence of Ti3AlC2 phase without im-purities of Al2O3 and TiC. The morphology studies using SEM confirms the lamellar structure of Ti3AlC2 and EDS measurements shows atomic percentage of Ti, Al and C are in compliance with the XRD phase analysis. X-ray Photoelectron spectroscopy investigations confirm the Ti-C bond. Core level XPS data of Al2p peak show a negative shift indicating electrostatic bonding of Al in Ti3AlC2. Ti2p and C1s core level spectra show the bonding of Mn+1Xn i.e TiC bond. TG-DSC results revealed approximately 7% increase in weight. Ti3AlC2 phase follows an endothermic pattern and does not undergo decomposition upto 1400 degrees C in vacuum environment. From XRD analysis at different temperatures, it was seen that Al2O3 and TiCx peaks started to form along with Ti3AlC2 at 1000 degrees C because of selective oxidation of Al into Al2O3. Thus, this study provides a beneficial approach to synthesis of high-purity Ti3AlC2 materials and understanding the thermal behaviour of Ti3AlC2 for high tem-perature applications.
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页数:8
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