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- [1] Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on SiACS APPLIED MATERIALS & INTERFACES, 2016, 8 (11) : 7232 - 7237Chernikova, Anna论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaKozodaev, Maksim论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaMarkeev, Andrei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaNegrov, Dmitrii论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaSpiridonov, Maksim论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaZarubin, Sergei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaBak, Ohheum论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaBuraohain, Pratyush论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaLu, Haidong论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaSuvorova, Elena论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland AV Shubnikov Crystallog Inst, Leninsky Pr 59, Moscow 119333, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaGruverman, Alexei论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaZenkevich, Andrei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia NRNU Moscow Engn Phys Inst, Moscow 115409, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
- [2] A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurementNANOSCALE, 2016, 8 (03) : 1383 - 1389Kim, Han Joon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaPark, Min Hyuk论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKim, Yu Jin论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaLee, Young Hwan论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaMoon, Taehwan论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaDo Kim, Keum论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaHyun, Seung Dam论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaHwang, Cheol Seong论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
- [3] Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodesJOURNAL OF APPLIED PHYSICS, 2021, 130 (13)Fields, Shelby S.论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USASmith, Sean W.论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Radiant Technol, Albuquerque, NM USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USAJaszewski, Samantha T.论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USAMimura, Takanori论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USADickie, Diane A.论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA Univ Virginia, Dept Chem, Charlottesville, VA 22904 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USAEsteves, Giovanni论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USAHenry, M. David论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USAWolfley, Steve L.论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USADavids, Paul S.论文数: 0 引用数: 0 h-index: 0机构: Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USAIhlefeld, Jon F.论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA Univ Virginia, Charles L Brown Dept Elect & Comp Engn, Charlottesville, VA 22904 USA Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
- [4] High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layerNANOTECHNOLOGY, 2022, 33 (08)论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Oh, Seungyeol论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South Korea论文数: 引用数: h-index:机构:Kim, Hyungwoo论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South KoreaJang, Hojung论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South KoreaHwang, Hyunsang论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, 77 Cheongam Ro, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, 77 Cheongam Ro, Pohang 790784, South Korea
- [5] Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5Zr0.5O2: Interfacial Layer Soft Breakdown and Physical ModelingIEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (05) : 3365 - 3370Cho, Chen-Yi论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanChao, Tzu-Yi论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanLin, Tzu-Yao论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanWang, I-Ting论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanDe, Sourav论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanChen, Yu-Sheng论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co Ltd, Embedded Technol Div, Hsinchu 300091, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanOng, Yi-Ching论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co Ltd, Embedded Technol Div, Hsinchu 300091, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanLin, Yu-De论文数: 0 引用数: 0 h-index: 0机构: Ind Technol Res Inst, Hsinchu 310401, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanYeh, Po-Chun论文数: 0 引用数: 0 h-index: 0机构: Ind Technol Res Inst, Hsinchu 310401, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, TaiwanHou, Tuo-Hung论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan Natl Yang Ming Chiao Tung Univ, Ind Acad Innovat Sch, Hsinchu 30010, Taiwan Taiwan Semicond Res Inst, Hsinchu 300091, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
- [6] Structural changes during wake-up and polarization switching in a ferroelectric Hf0.5Zr0.5O2 filmACTA MATERIALIA, 2025, 284Margolin, Ilya论文数: 0 引用数: 0 h-index: 0机构: Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, Russia Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, RussiaKorostylev, Evgeny论文数: 0 引用数: 0 h-index: 0机构: Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, Russia Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, RussiaKalika, Elizaveta论文数: 0 引用数: 0 h-index: 0机构: Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, Russia Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, RussiaNegrov, Dmitrii论文数: 0 引用数: 0 h-index: 0机构: Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, Russia Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, RussiaChouprik, Anastasia论文数: 0 引用数: 0 h-index: 0机构: Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, Russia Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Lane, Dolgoprudnyi 141700, Russia
- [7] Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface EngineeringACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (02) : 629 - 638论文数: 引用数: h-index:机构:Kim, Hyungwoo论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Pohang 37673, South KoreaOh, Seungyeol论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Pohang 37673, South KoreaHwang, Hyunsang论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Pohang 37673, South Korea
- [8] Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffractionACTA MATERIALIA, 2023, 246Chang, Teng-Jan论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanChen, Hsing-Yang论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanWang, Chin-, I论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanLin, Hsin-Chih论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanHsu, Chen-Feng论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanWang, Jer-Fu论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanNien, Chih-Hung论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanChang, Chih-Sheng论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanRadu, Iuliana P.论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanChen, Miin-Jang论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan
- [9] Wake-Up Free Hf0.5Zr0.5O2 FerroelectricCapacitor by Annealing and Insertinga Top Dielectric LayerIEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (10) : 6022 - 6026Liao, Min论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaChai, Junshuai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaXiang, Jinjuan论文数: 0 引用数: 0 h-index: 0机构: Beijing Superstring Acad Memory Technol, Beijing 100176, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaHan, Kai论文数: 0 引用数: 0 h-index: 0机构: Weifang Univ, Sch Phys & Elect Informat, Weifang 261061, Shandong, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Yanrong论文数: 0 引用数: 0 h-index: 0机构: North China Univ Technol, Sch Informat Sci & Technol, Beijing 100144, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaXu, Hao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Xiaolei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaZhang, Jing论文数: 0 引用数: 0 h-index: 0机构: North China Univ Technol, Sch Informat Sci & Technol, Beijing 100144, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Wenwu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
- [10] TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effectAPPLIED PHYSICS LETTERS, 2019, 114 (05)Li, Yuxing论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiang, Renrong论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaXiong, Benkuan论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiu, Houfang论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaZhao, Ruiting论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLi, Jingzhou论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaLiu, Ting论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaPang, Yu论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaTian, He论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaYang, Yi论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaRen, Tian-Ling论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China