Integration of High-Performance InGaAs/GaN Photodetectors by Direct Bonding via Micro-transfer Printing

被引:8
作者
Liu, Yang [1 ,2 ]
Li, Zhi [2 ]
Atar, Fatih Bilge [2 ]
Muthuganesan, Hemalatha [2 ]
Corbett, Brian [2 ]
Wang, Lai [1 ]
机构
[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRist, Dept Elect Engn, Beijing 100084, Peoples R China
[2] Univ Coll Cork, Tyndall Natl Inst, Cork T12 K8AF, Ireland
基金
爱尔兰科学基金会; 中国国家自然科学基金;
关键词
micro-transfer printing; direct bonding; vander Waals force; interface states; interface processing; photodetectors; P-N-JUNCTIONS; SURFACE-ROUGHNESS; SEMICONDUCTOR;
D O I
10.1021/acsami.3c17663
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The integration of dissimilar semiconductor materials holds immense potential for harnessing their complementary properties in novel applications. However, achieving such combinations through conventional heteroepitaxy or wafer bonding techniques presents significant challenges. In this research, we present a novel approach involving the direct bonding of InGaAs-based p-i-n membranes with GaN, facilitated by van der Waals forces and microtransfer printing technology. The resulting n-InP/n-GaN heterojunction was rigorously characterized through electrical measurements, with a comprehensive investigation into the impact of various surface treatments on device performance. The obtained InGaAs/GaN photodetector demonstrates remarkable electrical properties and exhibits a high optical responsivity of 0.5 A/W at the critical wavelength of 1550 nm wavelength. This pioneering work underscores the viability of microtransfer printing technology in realizing large lattice-mismatched heterojunction devices, thus expanding the horizons of semiconductor device applications.
引用
收藏
页码:10996 / 11002
页数:7
相关论文
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