A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy

被引：4

作者：

Hou, Zhongxuan ^{[1
,2
]}

Zhang, Yongkang ^{[1
]}

Si, Chaowei ^{[1
]}

Han, Guowei ^{[1
]}

Zhao, Yongmei ^{[1
,2
,3
,4
]}

Lu, Xiaorui ^{[1
]}

Liu, Jiahui ^{[1
]}

Ning, Jin ^{[1
,2
,3
,4
]}

Wei, Tongbo ^{[5
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[4] Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100083, Peoples R China

[5] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China

来源：

MICROMACHINES | 2023年 / 14卷 / 06期

基金：

中国国家自然科学基金;

关键词：

RF MEMS; switch; Al-Sc alloy; S-parameters;

D O I：

10.3390/mi14061098

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper presents a new metal-contact RF MEMS switch based on an Al-Sc alloy. The use of an Al-Sc alloy is intended to replace the traditional Au-Au contact, which can greatly improve the hardness of the contact, and thus improve the reliability of the switch. The multi-layer stack structure is adopted to achieve the low switch line resistance and hard contact surface. The polyimide sacrificial layer process is developed and optimized, and the RF switches are fabricated and tested for pull-in voltage, S-parameters, and switching time. The switch shows high isolation of more than 24 dB and a low insertion loss of less than 0.9 dB in the frequency range of 0.1-6 GHz.

引用

页数：12

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