Mid-Infrared Silicon-on-Lithium-Niobate Electro-Optic Modulators Toward Integrated Spectroscopic Sensing Systems

被引:25
作者
Xu, Siyu [1 ,2 ,3 ]
Ren, Zhihao [1 ,2 ,3 ]
Dong, Bowei [1 ,2 ,3 ]
Zhou, Jingkai [1 ,2 ,3 ]
Liu, Weixin [1 ,2 ,3 ]
Lee, Chengkuo [1 ,2 ,3 ,4 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117583, Singapore
[2] Natl Univ Singapore, Ctr Intelligent Sensors, 4 Engn Dr 3, Singapore 117608, Singapore
[3] Natl Univ Singapore, MEMS, 4 Engn Dr 3, Singapore 117608, Singapore
[4] Natl Univ Singapore, NUS Grad Sch Integrat Sci Engn Programme ISEP, Singapore 119077, Singapore
基金
新加坡国家研究基金会;
关键词
electro-optic modulators; lithium niobate; mid-infrared waveguide platform; pure phase modulation; silicon photonics; transfer printing; NITRIDE PHOTONIC CIRCUITS; MACH-ZEHNDER MODULATORS; THIN-FILM; PHASE-SHIFTER; WAVE-GUIDES; METAMATERIAL; MEMS; PROGRESS; PLATFORM; CHIP;
D O I
10.1002/adom.202202228
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mid-infrared spectroscopy is an emerging technique in various applications such as molecule identification and label-free chemical sensing. Integrated photonic platforms have a promising potential to perform miniaturized spectroscopic sensing with the advantage of compact footprint, low cost, and low power consumption. As an essential building block for integrated photonics, on-chip phase shifter plays an important role in mid-infrared spectroscopic systems, enabling signal processing and spectrum analysis. However, the implementation of effective pure phase modulation in mid-infrared photonics remains challenging due to the unavoidable electroabsorption in the plasma dispersion effect at a long wavelength. Here, silicon photonic devices are built on lithium niobate substrates to simultaneously leverage the prominent electro-optic effect and circumvent the absorption originating from the oxide layer. In particular, a reliable transfer printing method is presented for flexibly integrating the monocrystalline silicon waveguides with foreign substrates. In the fabricated silicon-on-lithium-niobate platform, the electro-optic performance is exploited via Mach-Zehnder interferometer for operation in the mid-infrared regime. The modulator achieves half-wave voltage length product of 12.3 V center dot cm at the wavelength of 3.78 mu m, with a maximum extinction ratio of 25.2 dB. These results indicate the potential of the proposed technology for the implementation of integrated mid-infrared spectroscopic sensing systems.
引用
收藏
页数:10
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