Comparative Study and Modeling of AlGaN/GaN Heterostructure HEMT and MOSHEMT Biosensors

被引:0
作者
Bouguenna, Abdellah [1 ]
Bouguenna, Driss [2 ,3 ]
Stambouli, Amine Boudghene [1 ]
Bhat, Aasif Mohammad [4 ]
机构
[1] Univ Sci & Technol Oran USTO MB, Fac Elect Engn, Dept Elect, Elect Engn Lab Oran, Oran 31000, Algeria
[2] Mascara Univ, Nat & Life Sci Fac, Geomat Ecol & Environm Lab, Mascara 29000, Algeria
[3] Mascara Univ, ST Dept, Mascara 29000, Algeria
[4] Malaviya Natl Inst Technol, Dept Elect & Commun Engn, Jaipur 302017, India
来源
INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS | 2023年 / 16卷 / 03期
关键词
AlGaN/GaN; Biosensors; HEMT; MOSHEMT; Permittivity; C-ERBB-2; SENSOR; DC;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper presents a comprehensive comparative study and analytical modelling of electrical performance of AlGaN/GaN high-electron-mobility transistor (HEMT) and metal oxide-semiconductor high-electron-mobility transistor (MOSHEMT) biosensors. Sensing parameters such as the I-V characteristics and sensitivity parameter for biomolecules detection in the cavity region are taken into consideration. In this paper, the permittivity is varied according to the biomolecule to be sensed by the biosensor. The maximal variation of the electrical performance of the biosensor obtained is higher in HEMT as compared with MOSHEMT. The simulation results of the analytical model obtained by using MATLAB verified by a comparison with experimental data and atlas-technology computer aided design (Atlas-TCAD), and shown good agreement with each other. Thereby, we could improve the validity of the proposed model. The AlGaN/GaN HEMT have shown good sensing of 141.73 at biomolecular permittivity of 2.5 which can be used for biosensing applications effectively.
引用
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页码:511 / 522
页数:12
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