Electron Detachments of NbSin-/0 (n=1-3) Clusters from Density Matrix Renormalization Group-CASPT2 Calculations

被引:1
作者
Tran, Van Tan [1 ]
机构
[1] Dong Thap Univ, Theoret & Phys Chem Div, Cao Lanh 871000, Dong Thap, Vietnam
关键词
STATES; CR; SI;
D O I
10.1021/acs.jpca.3c01230
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic states of NbSin-/0/+ (n = 1-3) clusters have been explored using the state-of-the-art DMRG-CASPT2 method with relatively large active spaces. The leading configurations, bond distances, vibrational frequencies, and relative energies of the low-lying states were identified. Electron detachment energies of the anionic cluster and ionization energies of the neutral clusters were reported at the DMRG-CASPT2 level. The ground states of the NbSin-/0/+ (n = 1-3) clusters were predicted as the 3 Delta, 4 pi, and 5 pi states of the linear NbSi-/0/+, the 3A2, 4B1, and 3B1 states of cyclic NbSi2-/0/+, and the 1A ', 2A ', and 3A '' states of tetrahedral NbSi3 -/0/+ isomers. The first feature in the photoelectron spectrum of NbSi- was attributed to the transitions from the anionic 3 Delta ground state to the neutral 4 pi, 4 Delta, and 4 phi states, whereas the second feature was assigned to the transitions to the neutral 2 Delta, 2 sigma+, and 2 phi states. The first band in the photoelectron spectrum of NbSi3- was ascribed to the transition from the anionic 1A ' ground state to the neutral 12A ' and 12A '' states; the second band was attributed to the transitions to 22A ', 22A '', and 32A ' states; and the third band was assigned to the transition to 32A ' states.
引用
收藏
页码:4086 / 4095
页数:10
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