Graphene-based terahertz optoelectronics

被引:39
作者
Zhou, Qiangguo [1 ,5 ]
Qiu, Qinxi [1 ,5 ]
Huang, Zhiming [1 ,2 ,3 ,4 ,5 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Space Act Optoelect Technol, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
[3] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, 1 Sub Lane Xiangshan, Hangzhou 310024, Peoples R China
[4] Fudan Univ, Inst Optoelect, 2005 Songhu Rd, Shanghai 200438, Peoples R China
[5] Univ Chinese Acad Sci, 19 Yu Quan Rd, Beijing 100049, Peoples R China
关键词
Graphene; Terahertz; Optoelectronic; Device; CHEMICAL-VAPOR-DEPOSITION; BROAD-BAND; LARGE-AREA; ELECTRONIC-PROPERTIES; WAVE GENERATION; HIGH-SPEED; MODULATOR; LIGHT; TRANSISTORS; PLASMONICS;
D O I
10.1016/j.optlastec.2022.108558
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Graphene is a new material with a single-layer two-dimensional (2D) honeycomb lattice structure. It has excellent optical, electrical and mechanical properties, and it is closely linked with terahertz (THz) science and technology by regulating the properties of graphene. This article reviews THz optoelectronic devices based on graphene materials, including THz lasers, modulators, detectors, and phase shifters. It first introduces the growth, transfer and patterning process of graphene and the points paid attention in related processes, and then analyzes the interaction mechanism between graphene and THz waves from the perspective of optical physics. Next it introduces the methods to improve the performance of graphene THz optoelectronic devices, such as dual/multilayer graphene structures, split ring resonators (SRRs), field effect transistors (FETs), coupled an-tennas, micro-cavity structures, and resonant cavity arrays. Then it summarizes the performance of graphene THz optoelectronic devices. By comparing graphene-based THz optoelectronic devices with traditional THz optoelectronic devices, it can be seen that graphene THz optoelectronic devices have excellent performance in terms of output band width, detection band width, responsivity, sensitivity, and noise equivalent power (NEP). Finally, it points out the problems and shortcomings in the performance of graphene-based THz optoelectronic devices, and proposes methods to improve the device performance, which provides ideas and directions for the further development of THz optoelectronic devices in the future.
引用
收藏
页数:36
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