Improvement in the efficiency of solar cells based on the ZnSnN2/ Si structure

被引:5
作者
Aissat, A. [1 ,2 ]
Chenini, L. [1 ]
Laidouci, A. [1 ]
Nacer, S. [1 ]
Vilcot, J. P. [2 ]
机构
[1] Univ Blida 1, Fac Technol, Blida 09000, Algeria
[2] Univ Sci & Technol Lille 1, Inst Elect Microelect & Nanotechnol IEMN, UMR CNRS 8520, Ave Poincare,60069, F-59652 Villeneuve dAscq, France
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2024年 / 300卷
关键词
Materials; New semiconductor; Thin film; Optical properties; Solar cells; Photovoltaic;
D O I
10.1016/j.mseb.2023.117071
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/ CdS/ZnSnN2/Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN2/Cds) and 7.17 % (ZnSnN2/Si). In addition to high efficiency, the ZnSnN2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology.
引用
收藏
页数:11
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