Improvement in the efficiency of solar cells based on the ZnSnN2/ Si structure

被引：5
作者：
Aissat, A. [1 ,2 ]
Chenini, L. [1 ]
Laidouci, A. [1 ]
Nacer, S. [1 ]
Vilcot, J. P. [2 ]
机构：
[1] Univ Blida 1, Fac Technol, Blida 09000, Algeria
[2] Univ Sci & Technol Lille 1, Inst Elect Microelect & Nanotechnol IEMN, UMR CNRS 8520, Ave Poincare,60069, F-59652 Villeneuve dAscq, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2024年 / 300卷
关键词：
Materials; New semiconductor; Thin film; Optical properties; Solar cells; Photovoltaic;
D O I：
10.1016/j.mseb.2023.117071
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/ CdS/ZnSnN2/Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN2/Cds) and 7.17 % (ZnSnN2/Si). In addition to high efficiency, the ZnSnN2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology.
引用
收藏
页数：11
相关论文
共 31 条
[1]   Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells [J].
Aissat, A. ;
Arbouz, H. ;
Nacer, S. ;
Benyettou, F. ;
Vilcot, J. P. .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2016, 41 (45) :20867-20873
[2]   Chemical environment and functional properties of highly crystalline ZnSnN2 thin films deposited by reactive sputtering at room temperature [J].
Alnjiman, F. ;
Diliberto, S. ;
Ghanbaja, J. ;
Haye, E. ;
Kassavetis, S. ;
Patsalas, P. ;
Gendarme, C. ;
Bruyere, S. ;
Cleymand, F. ;
Miska, P. ;
Boulet, P. ;
Pierson, J. F. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 182 :30-36
[3]   Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN2-Based Solar Cells [J].
Arca, Elisabetta ;
Fioretti, Angela ;
Lany, Stephan ;
Tamboli, Adele C. ;
Teeter, Glenn ;
Melamed, Celeste ;
Pan, Jie ;
Wood, Kevin N. ;
Toberer, Eric ;
Zakutayev, Andriy .
IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 8 (01) :110-117
[4]   Modeling and optimization of CuIn1-xGaxSe2/Si1-yGey structure for solar cells applications [J].
Boubakeur, M. ;
Aissat, A. ;
Chenini, L. ;
Ben Arbia, M. ;
Maaref, H. ;
Vilcot, J. P. .
PHYSICA B-CONDENSED MATTER, 2023, 666
[5]   Enhancement of the efficiency of ultra-thin CIGS/Si structure for solar cell applications [J].
Boubakeur, M. ;
Aissat, A. ;
Ben Arbia, M. ;
Maaref, H. ;
Vilcot, J. P. .
SUPERLATTICES AND MICROSTRUCTURES, 2020, 138
[6]   Investigation on structural and optoelectronic properties of in-situ post growth annealed ZnSnN2 thin films [J].
Chinnakutti, Karthik Kumar ;
Panneerselvam, Vengatesh ;
Salammal, Shyju Thankaraj .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 89 :234-239
[7]  
Coronel NC., 2016, Earth-Abundant Zinc-IV-Nitride Semiconductors
[8]   Determination of the basic optical parameters of ZnSnN2 [J].
Deng, Fuling ;
Cao, Hongtao ;
Liang, Lingyan ;
Li, Jun ;
Gao, Junhua ;
Zhang, Hongliang ;
Qin, Ruifeng ;
Liu, Caichi .
OPTICS LETTERS, 2015, 40 (07) :1282-1285
[9]  
Fioretti A.N., 2017, Development of Zinc Tin Nitride for Application as an Earth Abundant Photovoltaic Absorber
[10]   Nitride Layer Screening as Carrier-Selective Contacts for Silicon Heterojunction Solar Cells [J].
Fioretti, Angela N. ;
Boccard, Mathieu ;
Tamboli, Adele C. ;
Zakutayev, Andriy ;
Ballif, Christophe .
SILICONPV 2018: THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS, 2018, 1999
1234