RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design

被引:7
作者
Das, Hritom [1 ]
Rathore, Manu [1 ]
Febbo, Rocco [1 ]
Liehr, Maximilian [2 ]
Cady, Nathaniel C. [2 ]
Rose, Garrett S. [1 ]
机构
[1] Univ Tennessee, Dept EECS, Knoxville, TN 37916 USA
[2] SUNY Polytech Inst Albany, Coll Nanoscale Sci & Engn, Albany, NY USA
来源
PROCEEDINGS OF THE GREAT LAKES SYMPOSIUM ON VLSI 2023, GLSVLSI 2023 | 2023年
关键词
Memristor; ReRAM; synapse; low resistive state; high resistive state; RESET failure; reliability; neuromorphic;
D O I
10.1145/3583781.3590211
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
Memristors are a suitable candidate to design synapse circuits and neuromorphic systems. Due to device and voltage variability, operating a memristive device with reliability is a big challenge. To enhance the reliability of memristive synapse, RESET failure needs to be considered. In this work, we are focused on RESET failure modeling with RESET voltage variation. Here, the RESET failure is defined as hard failure of the memristive synapse due to a high RESET voltage being applied. The proposed Verilog-A model is derived based on experimental data collected from 1T1R devices, which are fabricated on 65 nm CMOS process. To enhance the reliability of system-level simulation, this device model will provide better guidelines to the designer. In addition, power consumption for a successful RESET operation is 7.065 mu W at 1.5 V, which can RESET the memristor resistance from 5 k ohm to 200 k ohm.
引用
收藏
页码:281 / 286
页数:6
相关论文
共 16 条
[1]  
Amer S, 2017, IEEE INT SYMP CIRC S, P2006
[2]  
Amer Sherif, 2019, DEVICE MODELING CIRC
[3]   Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory [J].
Balatti, Simone ;
Ambrogio, Stefano ;
Wang, Zhongqiang ;
Sills, Scott ;
Calderoni, Alessandro ;
Ramaswamy, Nirmal ;
Ielmini, Daniele .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) :3365-3372
[4]  
Ben Hur R, 2017, ICCAD-IEEE ACM INT, P225, DOI 10.1109/ICCAD.2017.8203782
[5]  
Boscke TS, 2011, INT EL DEV M
[6]  
Chai Zhen., 2016, 2016 Asia Communications and Photonics Conference (ACP), P1, DOI [10.1109/VLSIT.2016.7573402, DOI 10.1109/VLSIT.2016.7573402]
[7]  
Chen YY, 2012, 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
[8]   MEMRISTOR - MISSING CIRCUIT ELEMENT [J].
CHUA, LO .
IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05) :507-+
[9]   To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time [J].
Fadeev A.V. ;
Rudenko K.V. .
Russian Microelectronics, 2021, 50 (05) :311-325
[10]  
Kim W, 2016, INT EL DEVICES MEET