Performance of a Novel Rear-Triggered 4H-SiC Photoconductive Semiconductor Switch

被引：12

作者：

Feng, Zhuoyun ^{[1
,2
,3
]}

Luan, Chongbiao ^{[1
]}

Xiao, Longfei ^{[2
,3
]}

Li, Yangfan ^{[2
,3
]}

Sha, Huiru ^{[2
,3
]}

Sun, Xun ^{[2
,3
]}

Chen, Xiufang ^{[2
,3
]}

Xu, Xiangang ^{[2
,3
]}

Li, Hongtao ^{[1
]}

机构：

[1] China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[3] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 02期

关键词：

Carrier lifetime; carrier mobility; ON-state; photoconductive semiconductor switch; SiC; simulation results; HIGH-POWER;

D O I：

10.1109/TED.2022.3227889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radial lateral structure photoconductive switches are fabricated in this work via vanadium-doped 4H-SiC and high-purity 4H-SiC materials. The switches are triggered by 355-and 532-nm laser, and the performance of the switch is compared in the applied voltage range of 1-10 kV and laser energy range of 0.3-14 mJ. The experimental results show that the conduction current of the laser incident from the rear is larger. Simulations of the current density distribution of a 2-D cross section of the photoconductive switch provide theoretical support for this phenomenon. Additionally, the conduction current of the high-purity material is found to be higher than that of the vanadium-doped material under the same conditions.

引用

页码：627 / 632

页数：6

共 50 条

[31] DC and noise characteristics of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors
Chiou, YZ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (5A): : 2432 - 2434
[32] 4H-SiC metal-semiconductor-metal ultraviolet photodetectors with Ni/ITO electrodes
Su, YK
Chiou, YZ
Chang, CS
Chang, SJ
Lin, YC
Chen, JF
SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2237 - 2240
[33] A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
Jia, Hujun
Dong, Mengyu
Wang, Xiaowei
Zhu, Shunwei
Yang, Yintang
MICROMACHINES, 2021, 12 (05)
[34] High frequency 4H-SiC MOSFETS
Gudjonsson, G.
Allerstam, F.
Nilsson, P.-A.
Hjelmgren, H.
Sveinbjornsson, E. O.
Zirath, H.
Rodle, T.
Jos, R.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 795 - 798
[35] Solubility limits of dopants in 4H-SiC
Linnarsson, MK
Zimmermann, U
Wong-Leung, J
Schöner, A
Janson, MS
Jagadish, C
Svensson, BG
APPLIED SURFACE SCIENCE, 2003, 203 : 427 - 432
[36] Latchup Risk in a 4H-SiC Process
Ke, Chao-Yang
Ker, Ming-Dou
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (05) : 3424 - 3428
[37] Influence of Nitrogen Doping in Vanadium- Compensated 4H-SiC on Transient Photocurrent Response for Photoconductive Microwave Generation
Chu, Xu
Meng, Jin
Wang, Haitao
Zhu, Danni
Yuan, Yuzhang
Huang, Liyang
Xiang, Zhongwu
Han, Jiangfeng
Deng, Bingfang
Cui, Yancheng
Zhang, Jiahao
IEEE PHOTONICS TECHNOLOGY LETTERS, 2024, 36 (08) : 531 - 534
[38] Lifetime of high-power GaAs photoconductive semiconductor switch triggered by laser of different power density
Liu, Yi
Wang, Wei
Shen, Yi
Shi, Jinshui
Zhang, Linwen
Xia, Liansheng
XX INTERNATIONAL SYMPOSIUM ON HIGH-POWER LASER SYSTEMS AND APPLICATIONS 2014, 2015, 9255
[39] Photoelectrochemistry of 4H-SiC in KOH solutions
van Dorp, D. H.
Kelly, J. J.
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2007, 599 (02): : 260 - 266
[40] Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
Fisher, Craig A.
Jennings, Michael R.
Sharma, Yogesh K.
Hamilton, Dean P.
Gammon, Peter M.
Perez-Tomas, Amador
Thomas, Stephen M.
Burrows, Susan E.
Mawby, Philip A.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2014, 27 (03) : 443 - 451

← 1 2 3 4 5 →