Performance of a Novel Rear-Triggered 4H-SiC Photoconductive Semiconductor Switch

被引：16

作者：

Feng, Zhuoyun ^{[1
,2
,3
]}

Luan, Chongbiao ^{[1
]}

Xiao, Longfei ^{[2
,3
]}

Li, Yangfan ^{[2
,3
]}

Sha, Huiru ^{[2
,3
]}

Sun, Xun ^{[2
,3
]}

Chen, Xiufang ^{[2
,3
]}

Xu, Xiangang ^{[2
,3
]}

Li, Hongtao ^{[1
]}

机构：

[1] China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[3] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 02期

关键词：

Carrier lifetime; carrier mobility; ON-state; photoconductive semiconductor switch; SiC; simulation results; HIGH-POWER;

D O I：

10.1109/TED.2022.3227889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radial lateral structure photoconductive switches are fabricated in this work via vanadium-doped 4H-SiC and high-purity 4H-SiC materials. The switches are triggered by 355-and 532-nm laser, and the performance of the switch is compared in the applied voltage range of 1-10 kV and laser energy range of 0.3-14 mJ. The experimental results show that the conduction current of the laser incident from the rear is larger. Simulations of the current density distribution of a 2-D cross section of the photoconductive switch provide theoretical support for this phenomenon. Additionally, the conduction current of the high-purity material is found to be higher than that of the vanadium-doped material under the same conditions.

引用

页码：627 / 632

页数：6

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