Nanocrystalline Ag-Cu-Al Alloy thin films with densely dispersed alumina particles prepared using reactive sputtering method with Ar-O2 mixed gas

被引:4
作者
Ueshima, Yoshiyuki [1 ]
Hasegawa, Masakatsu [1 ]
Kubota, Naoyoshi [2 ]
Matamura, Yuya [1 ]
Matsubara, Eiichiro [3 ]
Seki, Kazuaki [4 ]
Hirato, Tetsuji [1 ]
机构
[1] Kyoto Univ, Grad Sch Energy Sci, Yoshida Honmachi Sakyo Ku, Kyoto 6068501, Japan
[2] Nippon Steel Technol Co Ltd, R&D Supporting Unit, 1-8 Fuso-cho, Amagasaki, Hyogo 6600891, Japan
[3] Kyoto Univ, Grad Sch Engn, Yoshida honmachi Sakyo-ku, Kyoto 6068501, Japan
[4] Nippon Steel Corp Ltd, Adv Technol Res Labs Res & Dev, 20-1 Shintomi, Futtsu, Chiba 2938511, Japan
关键词
Silver; Thin film; Nanocrystalline structure; Grain boundary pinning; Reactive sputtering; Oxygen partial pressure; OXYGEN DIFFUSIVITY; SOLID SILVER; GRAIN-GROWTH; NUCLEATION; SOLUBILITY; ENERGIES;
D O I
10.1016/j.mtla.2023.101853
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As a first step to challenge the fabrication of highly O2-permeable Ag membranes, thin films of nanocrystalline Ag-Cu-Al alloys with densely dispersed Al2O3 particles were successfully prepared via reactive sputtering using Ar-O2 mixed gas. The effect of O2 partial pressure on the thin film structure during sputtering was investigated. A critical O2 partial pressure was required to obtain a nanocrystalline structure via simultaneous internal oxidation during sputtering. The critical condition was correlated with the flux ratio of O2 to Al impinging on the Ag film surface and the stoichiometric ratio of O to Al in Al2O3.
引用
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页数:17
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