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Optical and Field Emission Properties of Transparent Flexible ZnO Nanowire Films
被引:1
作者:
Cheng, Wan Shu
[1
]
Lai, Jiunn Ru
[2
]
Hsueh, Han Ting
[3
]
Cheng, Tsung Chieh
[4
]
机构:
[1] Providence Univ, Dept Comp Sci & Informat Management, 200,Sec 7,Taiwan Blvd, Taichung 43301, Taiwan
[2] Natl Kaohsiung Univ Sci & Technol, Dept Elect Engn, 415 Jiangong Rd, Kaohsiung 807618, Taiwan
[3] Taiwan Semicond Res Inst, 25 Xiaodong Rd, Tainan 704017, Taiwan
[4] Natl Kaohsiung Univ Sci & Technol, Dept Mech Engn, 415,Jiangong Rd, Kaohsiung 807618, Taiwan
关键词:
ZnO nanowires;
flexible substrate;
field emitter;
NANORODS;
GROWTH;
MICRORODS;
SUBSTRATE;
D O I:
10.18494/SAM4235
中图分类号:
TH7 [仪器、仪表];
学科分类号:
0804 ;
080401 ;
081102 ;
摘要:
Large-area field emitter arrays have important applications in flat-panel displays, light sources, gas sensors, and vacuum pressure sensors, where achieving high field emission currents and current densities over large areas is critical. In this study, well-aligned ZnO nanowires (NWs) were grown on a flexible substrate by the carbothermal reduction process and the vapor- liquid-solid (VLS) method. The ZnO NWs were single-crystalline wurtzite structures that showed a preferential growth orientation along the c-axis. The length and diameter of the ZnO NWs were 0.6 gm and 50 nm, respectively. The experimental results from field emission studies indicated that an emitter constructed from well-aligned, grass-like ZnO NWs exhibited a turn -on field of 16.1 Vgm-1 and a field enhancement factor of beta = 1073, and demonstrated a consistent single linear slope in a Fowler-Nordheim (F-N) plot, which indicates that the field emission from ZnO emitters is a barrier-tunneling, quantum mechanical process. In addition, the field emission properties of curved ZnO/Al-doped ZnO (ZnO/AZO) flexible field nanoemitters were also investigated in this study. The results show that the turn-on field and enhancement factor of ZnO NWs on AZO flexible substrates decrease as the bending angle increases owing to an increase in the total resistance of the AZO layer.
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页码:1089 / 1098
页数:10
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