Ultrahigh thermoelectric properties of p-type BixSb2-xTe3 thin films with exceptional flexibility for wearable energy harvesting

被引：18

作者：

Zheng, Zhuang-Hao ^{[1
]}

Zhong, Yi-Ming ^{[1
]}

Li, Yi-Liu ^{[1
]}

Nisar, Mohammad ^{[1
]}

Mansoor, Adil ^{[1
]}

Li, Fu ^{[1
]}

Chen, Shuo ^{[1
]}

Liang, Guang-Xing ^{[1
]}

Fan, Ping ^{[1
]}

Xu, Dongyan ^{[2
]}

Wei, Meng ^{[1
,3
]}

Chen, Yue-Xing ^{[1
,3
]}

机构：

[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst Minist Educ & Gua, Shenzhen, Peoples R China

[2] Chinese Univ Hong Kong, Dept Mech & Automat Engn, Sha Tin, Hong Kong, Peoples R China

[3] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst Minist Educ & Gua, Shenzhen 518060, Peoples R China

来源：

CARBON ENERGY | 2024年 / 6卷 / 08期

基金：

中国国家自然科学基金;

关键词：

BixSb2-xTe3; electrical transport properties; flexibility; thermoelectric; THERMAL-CONDUCTIVITY; BI2TE3; FILMS; PERFORMANCE; SB2TE3; FIGURE; MERIT; ENHANCEMENT; FABRICATION; TRANSITION; COMPOSITE;

D O I：

10.1002/cey2.541

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Use of a flexible thermoelectric source is a feasible approach to realizing self-powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high-thermoelectric-performance thin films remains a big challenge. In the present work, a p-type BixSb2-xTe3 thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of similar to 5 mm). The favorable comprehensive performance of the BixSb2-xTe3 flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p-type BixSb2-xTe3 and n-type Ag2Se thin films. Consequently, an outstanding power density of similar to 1028 mu W cm(-2) is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high-performance flexible thin films and devices for wearable energy harvesting.

引用

页数：12