Narrowband Near-Infrared Multiple-Resonance Thermally Activated Delayed Fluorescence Emitters towards High-Performance and Stable Organic Light-Emitting Diodes

被引:45
作者
Hua, Tao [1 ]
Li, Nengquan [1 ]
Huang, Zhongyan [1 ]
Zhang, Youming [2 ]
Wang, Lian [1 ]
Chen, Zhanxiang [1 ]
Miao, Jingsheng [1 ]
Cao, Xiaosong [1 ]
Wang, Xinzhong [2 ]
Yang, Chuluo [1 ]
机构
[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Key Lab New Informat Display & Storage Ma, Shenzhen 518060, Peoples R China
[2] Shenzhen Inst Informat Technol, Informat Technol Res Inst, Shenzhen 518172, Peoples R China
基金
中国国家自然科学基金;
关键词
Multiple Resonance; Narrowband Near-Infrared Emission; Organic Light-Emitting Diodes; Thermally Activated Delayed Fluorescence;
D O I
10.1002/anie.202318433
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Multiple-resonance thermally activated delayed fluorescence (MR-TADF) materials are highly coveted for their high efficiency and narrowband emission in organic light-emitting diodes (OLEDs). Nevertheless, the development of near-infrared (NIR) MR-TADF emitters remains a formidable challenge. In this study, we design two new NIR MR-TADF emitters, PXZ-R-BN and BCz-R-BN, by embedding 10H-phenoxazine (PXZ) and 7H-dibenzo[c,g]carbazole (BCz) fragments to increase the electron-donating ability or extending pi-conjugation on the framework of para-boron fusing polycyclic aromatic hydrocarbons (PAHs). Both compounds emit in the NIR region, with a full-width at half-maximum (FWHM) of 49 nm (0.13 eV) for PXZ-R-BN and 43 nm (0.11 eV) for BCz-R-BN in toluene. To sensitize the two NIR MR-TADF emitters in OLEDs, a new platinum complex, Pt-1, is designed as a sensitizer. The PXZ-R-BN-based sensitized OLEDs achieve a maximum external quantum efficiency (EQE(max)) of nearly 30 % with an emission band at 693 nm, and exceptional long operational stability with an LT97 (time to 97 % of the initial luminance) value of 39084 h at an initial radiance of 1000 mW sr(-1) m(-2). The BCz-R-BN-based OLEDs reach EQE(max) values of 24.2 % with an emission band at 713 nm, which sets a record value for NIR OLEDs with emission bands beyond 700 nm.
引用
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页数:7
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