Enhancing Electrochemical Performance with g-C3N4/CeO2 Binary Electrode Material

被引：17
作者：
Sekhar, M. Chandra [1 ]
Kumar, Nadavala Siva [2 ]
Asif, Mohammad [2 ]
Vattikuti, Surya Veerendra Prabhakar [3 ]
Shim, Jaesool [3 ]
机构：
[1] Madanapalle Inst Technol & Sci, Dept Phys, Madanapalle 517325, India
[2] King Saud Univ, Dept Chem Engn, POB 800, Riyadh 11421, Saudi Arabia
[3] Yeungnam Univ, Sch Mech Engn, Gyongsan 38541, South Korea
来源：
MOLECULES | 2023年 / 28卷 / 06期
关键词：
supercapacitor; storage device; quantum dots; nanostructure; electrode materials; FABRICATION; NANOSHEETS; COMPOSITE;
D O I：
10.3390/molecules28062489
中图分类号：
Q5 [生物化学]; Q7 [分子生物学];
学科分类号：
071010 ; 081704 ;
摘要：
An innovative form of 2D/0D g-C3N4/CeO2 nanostructure was synthesized using a simple precursor decomposition process. The 2D g-C3N4 directs the growth of 0D CeO2 quantum dots, while also promoting good dispersion of CeO(2)QDs. This 2D/0D nanostructure shows a capacitance of 202.5 F/g and notable rate capability and stability, outperforming the g-C3N4 electrode, reflecting the state-of-the-art g-C3N4 binary electrodes. The binary combination of materials also enables an asymmetric device (g-C3N4/CeO(2)QDs//AC) to deliver the highest energy density (9.25 Wh/kg) and power density (900 W/kg). The superior rate capacity and stability endorsed the quantum structural merits of CeO(2)QDs and layered g-C3N4, which offer more accessible sites for ion transport. These results suggest that the g-C3N4/CeO(2)QDs nanostructure is a promising electrode material for energy storage devices.
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页数：15
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