Si-Cr Nano-Alloys Fabricated by Direct Femtosecond Laser Writing

被引:2
|
作者
Maksimovic, Jovan [1 ,2 ]
Mu, Haoran [1 ,2 ]
Han, Molong [1 ,2 ]
Smith, Daniel [1 ,2 ]
Katkus, Tomas [1 ,2 ]
Anand, Vijayakumar [3 ,4 ]
Nishijima, Yoshiaki [5 ,6 ]
Ng, Soon Hock [1 ,2 ,7 ]
Juodkazis, Saulius [1 ,2 ,8 ]
机构
[1] Swinburne Univ Technol, Optic Sci Ctr, Ind Transformat Training Ctr Surface Engn Adv Mat, Hawthorn, Vic 3122, Australia
[2] Swinburne Univ Technol, Australian Res Council ARC, Hawthorn, Vic 3122, Australia
[3] Univ Tartu, Inst Phys, W Ostwaldi Str 1, EE-50411 Tartu, Estonia
[4] Swinburne Univ Technol, Opt Sci Ctr, Hawthorn, Vic 3122, Australia
[5] Yokohama Natl Univ, Grad Sch Engn, Dept Elect & Comp Engn, 79-5 Tokiwadai,Hodogaya Ku, Yokohama 2408501, Japan
[6] Yokohama Natl Univ, Inst Adv Sci, 79-5 Tokiwadai,Hodogaya Ku, Yokohama 2408501, Japan
[7] Melbourne Ctr Nanofabricat, 151 Wellington Rd, Clayton, Vic 3168, Australia
[8] Tokyo Inst Technol, WRH Program Int Res Frontiers Initiat IRFI, Nagatsuta Cho,Midori Ku, Yokohama 2268503, Japan
基金
澳大利亚研究理事会;
关键词
nano-alloy; Si-Cr; Si nano-needles; sub-100; nm; nanoscale; EFFICIENT BIFUNCTIONAL ELECTROCATALYSTS; SURFACE SEGREGATION; NICKEL; AU; REGIONS; OXYGEN; FILMS;
D O I
10.3390/ma16051917
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ultra-short 230 fs laser pulses of 515 nm wavelength were tightly focused into 700 nm focal spots and utilised in opening similar to 400 nm nano-holes in a Cr etch mask that was tens-of-nm thick. The ablation threshold was found to be 2.3 nJ/pulse, double that of plain silicon. Nano-holes irradiated with pulse energies below this threshold produced nano-disks, while higher energies produced nano-rings. Both these structures were not removed by either Cr or Si etch solutions. Subtle sub-1 nJ pulse energy control was harnessed to pattern large surface areas with controlled nano-alloying of Si and Cr. This work demonstrates vacuum-free large area patterning of nanolayers by alloying them at distinct locations with sub-diffraction resolution. Such metal masks with nano-hole opening can be used for formation of random patterns of nano-needles with sub-100 nm separation when applied to dry etching of Si.
引用
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页数:14
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