In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process

被引：2

作者：

Chou, Ta-Shun ^{[1
]}

Bin Anooz, Saud ^{[1
]}

Grueneberg, Raimund ^{[1
]}

Rehm, Jana ^{[1
]}

Akhtar, Arub ^{[1
]}

Mukherjee, Deshabrato ^{[2
,3
]}

Petrik, Peter ^{[2
,4
]}

Popp, Andreas ^{[1
]}

机构：

[1] Leibniz Inst Kristallzuchtung IKZ, Max Born Str,2, D-12489 Berlin, Germany

[2] Inst Tech Phys & Mat Sci, Ctr Energy Res, Konkoly Thege Mikl Str 29-33, H-1121 Budapest, Hungary

[3] Obuda Univ, Doctoral Sch Mat Sci & Technol, Budapest, Hungary

[4] Univ Debrecen, Fac Sci & Technol, POB 400, H-4002 Debrecen, Hungary

来源：

APPLIED SURFACE SCIENCE | 2024年 / 652卷

关键词：

A1; Surfaces; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; OPTICAL-PROPERTIES; REFRACTIVE-INDEX; GALLIUM OXIDE; SAPPHIRE; SURFACES; LAYERS;

D O I：

10.1016/j.apsusc.2024.159370

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Metalorganic vapor-phase epitaxy of beta-Ga2O3/c-plane Al2O3 heterostructures was monitored in -situ by spectral reflectance in different wavelengths. The reflectance spectrum was analysed as a function of the growth time and the incident wavelength to estimate the growth rate and the refractive index at the growth temperatures. The obtained values are validated by ex -situ methods such as secondary ion mass spectrum measurement and spectroscopic ellipsometry. A theoretical simulation of the reflectance spectrum was carried out by combining a transfer matrix method with a multilayer model, and a good agreement with the experimental results is presented.

引用

页数：7

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