Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

被引：0

作者：

Ammar, Ali ^{[1
]}

Lazar, Mihai ^{[2
]}

Vergne, Bertrand ^{[3
]}

Scharnholz, Sigo ^{[3
]}

Luong Viet Phung ^{[1
]}

Brosselard, Pierre ^{[1
]}

Tournier, Dominique ^{[1
]}

Sonneville, Camille ^{[1
]}

Raynaud, Christophe ^{[1
]}

Zielinski, Marcin ^{[4
]}

Morel, Herve ^{[1
]}

Planson, Dominique ^{[1
]}

机构：

[1] Univ Claude Bernard Lyon 1, Univ Lyon, CNRS, Ecole Cent Lyon,INSA Lyon,AMPERE, F-69621 Lyon, France

[2] Univ Technol Troyes, EMR CNRS 7004, Light, Nanomat,Nanotechnol, F-10004 Troyes, France

[3] FrenchGerman Res Inst St Louis, ISL, F-68301 St Louis, France

[4] NOVASIC, F-73375 Le Bourget Du Lac, France

来源：

ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY | 2023年 / 26卷 / 02期

关键词：

Bipolar junction transistor; high-voltage power semiconductor device; peripheral protection; power electronics; silicon carbide;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

For medium voltage, the SiC BJT is a convenient solution to reduce the onlosses and it could have the advantage to be optical controlled, to ease the serial connection of BJT. The design of a 10 kV, 10 A SiC BJT is described. The different fabrication steps are described. The analysis and optimization of the peripheral protection are described in detail. The fabricated wafers consist in several types of electrical BJT and diodes. Moreover some phototransistors have been fabricated. The selected solution is a combination of a JTE (Junction Termination Extension) and guard rings. The first measurement results are present. Some vacuum chamber probe level measurements have shown breakdown voltage up to 11 kV. Probe measurements of the forward characteristic have shown a good operation of the electrical BJT, with a current gain up to 20. Some dies have been packaged to achieve highcurrent measurement. The on-state characterizations show on current up to 15 A with a current gain that reach 15. First optical control tests have shown encouraging results.

引用

页码：193 / 204

页数：12

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