Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

被引：61
|
作者：
Zhao, Tiange [1 ,2 ]
Guo, Jiaxiang [2 ]
Li, Taotao [3 ]
Wang, Zhen [2 ]
Peng, Meng [2 ]
Zhong, Fang [2 ]
Chen, Yue [2 ]
Yu, Yiye [2 ]
Xu, Tengfei [2 ]
Xie, Runzhang [2 ]
Gao, Pingqi [1 ]
Wang, Xinran [3 ,4 ,5 ]
Hu, Weida [2 ]
机构：
[1] Sun Yat sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[2] Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing, Peoples R China
[4] Nanjing Univ, Sch Integrated Circuits, Suzhou, Peoples R China
[5] Suzhou Lab, Suzhou, Peoples R China
来源：
CHEMICAL SOCIETY REVIEWS | 2023年 / 52卷 / 05期
基金：
国家重点研发计划; 中国国家自然科学基金; 中国博士后科学基金;
关键词：
HEXAGONAL BORON-NITRIDE; SINGLE-CRYSTAL GRAPHENE; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; EPITAXIAL-GROWTH; MONOLAYER GRAPHENE; MOS2; TRANSISTORS; MOLTEN GLASS; FILMS; SIZE;
D O I：
10.1039/d2cs00657j
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
引用
收藏
页码：1650 / 1671
页数：22
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