Plasma Excitations in SiGe/Si Quantum Wells

被引：0

作者：

Khisameeva, A. R. ^{[1
]}

Shchepetil'nikov, A. V. ^{[1
,2
]}

Nikolaev, G. A. ^{[1
]}

Lopatina, S. A. ^{[1
,2
]}

Fedotova, Ya. V. ^{[1
]}

Kukushkin, I. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow, Russia

[2] HSE Univ, Moscow 101000, Russia

来源：

JETP LETTERS | 2023年 / 118卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

TERAHERTZ SPECTROSCOPY; COLLECTIVE RESPONSE; PHOTOCONDUCTIVITY; HETEROSTRUCTURES; RADIATION; RESONANCE;

D O I：

10.1134/S0021364023601793

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Plasma and magnetoplasma excitations in high-quality undoped two-dimensional electron systems based on SiGe/Si quantum wells are studied in detail. A two-dimensional electron system is formed by applying a vo-ltage to the top gate, which is partially transparent to subterahertz radiation in the frequency range of 20-160 GHz. The results for SiGe/Si quantum wells with a Sb & delta;-doping layer are also presented for comparison. The transport and quantum scattering times for both structures are directly determined. It has been found that the effective electron mass is almost independent of the two-dimensional electron density in a wide density range.

引用

页码：67 / 73

页数：7

共 48 条

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