Optical, electrical and thermal stability properties of Al and F co-doped ZnO thin films prepared by sol-gel spin-coating

The preparation of Al and F co-doped ZnO (AFZO) thin films on quartz substrates by sol-gel spin-coating method. Structural, morphological, optical, electrical and thermal stability properties have been investigated. The results showed that all the AFZO films had a typical wurtzite structure with a c-axis preferential orientation. The optical, electrical and thermal stability properties of AFZO thin films were highly strengthened compared with Al doped ZnO (AZO). The optical transmittance of all the AFZO films were above 90% in visible region (380- 780 nm). The resistivity of AFZO films decreases with F doped, and decreases further with annealed in N-2 atmosphere. The minimum resistivity of the AFZO thin films is 1.093 x 10(-3) Omega center dot cm, carrier concentration is 4.379 x 1020 cm(-3), and Hall mobility is 16.64 cm(2)/V center dot s. More importantly, the thermal stability of AFZO has been greatly improved. As the excellent optical, electrical and thermal stability properties, the AFZO thin films are more suitable for transparent conducting applications. The study of AFZO thin films opens a bright way for transparent conductive films with excellent thermal stability.