Modeling of material removal rate considering the chemical mechanical effects of lubricant, oxidant, and abrasive particles for aluminum chemical mechanical polishing at low pressure

被引:10
作者
Xia, Guang [1 ]
Wang, Zirui [1 ]
Yao, Qingyu [2 ]
Sun, Ping [1 ]
Guan, Huaijun [1 ]
Wang, Yongguang [1 ]
Fan, Cheng [1 ]
Bian, Da [3 ]
Zhao, Dong [1 ]
Zhao, Yongwu [3 ]
机构
[1] Soochow Univ, Sch Mech & Elect Engn, Suzhou 215021, Peoples R China
[2] Huanghe Sci & Technol Univ, Fac Engn, Zhengzhou 450000, Peoples R China
[3] Jiangnan Univ, Sch Mech Engn, Wuxi 214122, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Aluminum; Chemical mechanical polishing; Lubrication; Material removal rate; MICRO-CONTACT; PLANARIZATION; CMP; KINETICS; SURFACE; SCALE; SIZE;
D O I
10.1016/j.wear.2023.205023
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Lubricants are widely used for aluminum (Al) chemical mechanical polishing (CMP) to eliminate surface scratch damage. Understanding of the fundamental of CMP material removal mechanisms including lubrication is crucial to offer insights into the control and optimization of the polishing process. This paper proposes a novel material removal rate (MRR) model based upon molecular-scaled removal mechanism, micro-contact force equilibrium theory, chemical reaction kinetics and diffusion effects, with further considering the lubricant effect on the removal rate at low polishing pressure. Moreover, the presented model also clarifies the nonlinear dependence of removal rate on lubricant concentration, oxidizer concentration, and abrasive concentration. The model pre-diction results could provide qualitative insights into the influence of lubricant concentration, oxidizer con-centration, and abrasive concentration on MRR, thus providing theoretical foundation and support for delineating the Al-CMP process at low pressure. Finally, it is found that the theoretical predictions possess qualitative agreement with the experimental results.
引用
收藏
页数:11
相关论文
共 49 条
  • [1] In situ AFM study of surface layer removal during copper CMP
    Berdyyeva, TK
    Emery, SB
    Sokolov, IY
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (07) : G91 - G94
  • [2] A locally relevant wafer-scale model for CMP of silicon dioxide
    Castillo-Mejia, D
    Beaudoin, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (09) : G581 - G586
  • [3] A chemical kinetics model for a mixed-abrasive chemical mechanical polishing
    Chen, PH
    Huang, BW
    Shih, HC
    [J]. THIN SOLID FILMS, 2005, 483 (1-2) : 239 - 244
  • [4] Catalytic-pad chemical kinetics model of CMP
    Chen, PH
    Shih, HC
    Huang, BW
    Hsu, JW
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (12) : G140 - G142
  • [5] Effects of pH and H2O2 on the chemical mechanical polishing of titanium alloys
    Deng, Changbang
    Jiang, Liang
    Qin, Na
    Qian, Linmao
    [J]. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2021, 295
  • [6] CMP Solutions for the Integration of High-K Metal Gate Technologies
    Dysard, J. M.
    Brusic, V.
    Feeney, P.
    Grumbine, S.
    Moeggenborg, K.
    Whitener, G.
    Ward, W. J.
    Burns, G.
    Choi, K.
    [J]. CHEMICAL MECHANICAL POLISHING 11, 2010, 33 (10): : 77 - 89
  • [7] A plasticity-based model of material removal in chemical-mechanical polishing (CMP)
    Fu, GH
    Chandra, A
    Guha, S
    Subhash, G
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2001, 14 (04) : 406 - 417
  • [8] Application of the Arrhenius equation to solid state kinetics: can this be justified?
    Galwey, AK
    Brown, ME
    [J]. THERMOCHIMICA ACTA, 2002, 386 (01) : 91 - 98
  • [9] CONTACT OF NOMINALLY FLAT SURFACES
    GREENWOOD, JA
    WILLIAMSON, JB
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1966, 295 (1442) : 300 - +
  • [10] Hong Q.X., 2022, CHINA SEMICONDUCTOR, P1