Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage

被引：0

作者：

Mori-Tamamura, Keito ^{[1
]}

Morimoto, Yuya ^{[1
]}

Yamaguchi, Atsushi A. ^{[1
]}

Kusanagi, Susumu ^{[2
]}

Kanitani, Yuya ^{[2
]}

Kudo, Yoshihiro ^{[2
]}

Tomiya, Shigetaka ^{[2
]}

机构：

[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, Nonoichi, Ishikawa 9218501, Japan

[2] Sony Semicond Solut Corp, Res Div 3, Atsugi, Kanagawa 2430014, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 01期

关键词：

InGaN quantum well; ion-implantation; carrier dynamics; recombination lifetime; internal quantum efficiency; TIME-RESOLVED PHOTOLUMINESCENCE; GAN; MODEL;

D O I：

10.35848/1347-4065/acfb18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we have separately evaluated the radiative and non-radiative recombination lifetimes for InGaN quantum well (QW) samples with different amounts of ion-implantation damage, and have investigated their temperature dependence. The radiative and non-radiative recombination lifetimes were calculated from photoluminescence (PL) decay time measured by time-resolved PL measurements, combined with the absolute internal quantum efficiency values estimated by the simultaneous photoacoustic and PL measurements. As a result, the experimentally observed radiative recombination lifetimes are almost the same for all samples, while the non-radiative recombination lifetimes are shorter for samples with larger ion-implantation damage. These findings will lead to a comprehensive understanding of carrier dynamics in InGaN-QW optical devices.

引用

页数：5

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