InP HBT Technology: Advantages, Applications and Future Challenges

被引:0
|
作者
DeMange, Scott [1 ]
Wu, Barry [1 ]
机构
[1] Keysight Technol, Santa Rosa, CA 95403 USA
关键词
ICS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:18 / 26
页数:9
相关论文
共 50 条
  • [1] InP HBT technology and applications
    Streit, DC
    Cowles, JC
    Kobayashi, KW
    Gutierrez-Aitken, A
    Block, TR
    Wojotowicz, M
    Yamada, F
    Kaneshiro, E
    Tran, LT
    Grossman, C
    Yang, LW
    Lammert, M
    Leslie, G
    Steel, V
    Denning, D
    Oki, AK
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 64 - 67
  • [2] InP HBT & HEMT technology and applications
    Oki, A.K.
    Streit, D.C.
    Lai, R.
    Gutierrez-Aitken, A.
    Chen, Y.C.
    Grundbacher, R.
    Grossman, P.C.
    Block, T.
    Chin, P.
    Barsky, M.
    Sawdai, D.
    Wojtowicz, M.
    Kaneshiro, E.
    Yen, H.C.
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 7 - 8
  • [3] InP HBT technology for THz applications
    Weimann, Nils
    2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2020, : 190 - 192
  • [4] InP heterojunction bipolar transistor (HBT) technology for power applications
    Kobayashi, KW
    Oki, AK
    Gutierrez-Aitken, A
    Chin, P
    Tran, LT
    Yang, LW
    Sawdai, D
    Kaneshiro, E
    Grossman, PC
    Sato, K
    Block, TR
    Yen, HC
    Streit, DC
    COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII), 2000, 2000 (01): : 69 - 81
  • [5] InP HBT Technology and Modeling
    Hitko, Donald A.
    Li, James Chingwei
    2013 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2013, : 123 - 126
  • [6] GaAs and InP-based HBT technology for 100 GHz applications
    Ahmari, DA
    Hartmann, QJ
    Feng, M
    Stillman, GE
    TERAHERTZ AND GIGAHERTZ PHOTONICS, 1999, 3795 : 528 - 541
  • [7] Future trends of HBT technology for commercial and defense applications
    Oki, AK
    Streit, DC
    Umemoto, DK
    Tran, LT
    Kobayashi, KW
    Yamada, FM
    Grossman, PC
    Block, T
    Lammert, MD
    Olson, SR
    Cowles, J
    Hoppe, MM
    Yang, L
    GutierrezAitken, A
    Kagiwada, RS
    Nojima, S
    Rezek, EA
    Pratt, W
    Neal, J
    Seymour, P
    Steel, V
    1997 IEEE MTT-S SYMPOSIUM ON TECHNOLOGIES FOR WIRELESS APPLICATIONS DIGEST, 1997, : 123 - 125
  • [8] A GaAsSb/InP HBT circuit technology
    Godin, J.
    Riet, M.
    Konczykowska, A.
    Berdaguer, P.
    Kahn, M.
    Bove, P.
    Lahreche, H.
    Langer, R.
    Lijadi, M.
    Pardo, F.
    Bardou, N.
    Pelouard, J-L.
    Maneux, C.
    Belhaj, M.
    Grandchamp, B.
    Labat, N.
    Touboul, A.
    Bru-Chevallier, C.
    Chouaib, H.
    Benyattou, T.
    GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS, 2005, : 133 - 136
  • [9] Advantages and challenges of novel materials for future space applications
    Pernigoni, L.
    Grande, A. M.
    FRONTIERS IN SPACE TECHNOLOGIES, 2023, 4
  • [10] THz MMICs based on InP HBT Technology
    Hacker, Jonathan
    Seo, Munkyo
    Young, Adam
    Griffith, Zach
    Urteaga, Miguel
    Reed, Thomas
    Rodwell, Mark
    2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 1126 - 1129