A 0.55V 10-Bit 100-MS/s SAR ADC With 3.6-fJ/Conversion-Step in 28nm CMOS for RF Receivers

被引:4
|
作者
Zhao, Yan [1 ]
Chen, Chao [1 ]
Yang, Jun [1 ]
机构
[1] Southeast Univ, Natl Applicat Specif Integrated Circuit Ctr, Nanjing 210096, Peoples R China
关键词
Analog-to-digital converter (ADC); successive approximation register (SAR); low voltage; adaptive-biasing comparator with current self-compensation (CSC) technique; pulse injection undershoot compensation technique;
D O I
10.1109/TCSII.2021.3117941
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief proposes a low voltage ultra-low power 10-bit 100-MS/s successive approximation register (SAR) analog-to-digital converter (ADC). To overcome the performance degradation due to the signal-related current fluctuation under lower supply voltage, an adaptive-biasing comparator with current self-compensation (CSC) technique is proposed to obtain a constant working current, reducing the minimum supply voltage from 0.7V in conventional ADCs to 0.55V. Since full-scale range shrinks with the supply voltage, voltage undershoot in power rail caused by capacitor digital-to-analog converter (C-DAC) deteriorates effective-number-of-bits (ENOB). Conventional solutions involve enhanced regulators and large decoupling capacitors, which cost remarkable power dissipation and large chip area. This brief presents a pulse-injection undershoot compensation technique which reduces the DAC-related supply fluctuation from a typical 15mV to 1.8mV, and improves the ENOB by 0.4 bit. The prototype was fabricated in TSMC 28nm HPC CMOS technology. The proposed SAR ADC achieves an SNDR of 54.7dB and an SFDR of 68dB with the power consumption of 0.16mW under 0.55V supply voltage, a figure of merit (FoM) of 3.6-fJ/conversion-step is achieved. The chip area of the ADC core is 130 mu mx225 mu m.
引用
收藏
页码:1811 / 1815
页数:5
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