Investigation of properties of Ta-doped Ga2O3 films prepared with seed layers

被引：5

作者：

Deng, Jie ^{[1
]}

Huang, Haofei ^{[1
]}

Tang, Ke ^{[1
,2
]}

Wang, Shilin ^{[1
]}

Wang, Mengqian ^{[1
]}

Liu, Zun ^{[1
]}

Gu, Keyun ^{[1
]}

Shang, Yi ^{[1
]}

Wang, Linjun ^{[1
,2
]}

Huang, Jian ^{[1
,2
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

[2] SHU, Zhejiang Inst Adv Mat, Jiashan 314113, Peoples R China

来源：

OPTIK | 2023年 / 274卷

基金：

中国国家自然科学基金;

关键词：

Ta-doped Ga2O3 films; Magnetron sputtering; Seed layer; Thickness; Electrical properties; THIN-FILM; GALLIUM OXIDE;

D O I：

10.1016/j.ijleo.2023.170550

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ga2O3 is a promising ultra-wide bandgap semiconductor as a feasible candidate for power electronics, photodetectors, and sensors. Controlling electrical properties through doping is the key to its application in semiconductor devices. In this work, Ta-doped Ga(2)O(3)films were prepared by radio frequency (RF) magnetron sputtering with seed layers. Effects of the thickness of seed layers on the microstructure, morphology, optical and electrical properties of Ta-doped Ga(2)O(3)films were investigated. The fabricated Ta-doped Ga(2)O(3)films exhibited polycrystalline structure with uniform and smooth surface and high optical transmittance (>80 %) in the visible light region. The results showed that seed layers with appropriate thickness (similar to 20 nm) is beneficial to the improvement of crystalline quality and electrical properties of Ta-doped Ga(2)O(3)films.

引用

页数：7

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