Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing

被引：5

作者：

Chen, Siheng ^{[1
]}

Cui, Peng ^{[1
]}

Linewih, Handoko ^{[1
]}

Cheong, Kuan Yew ^{[2
]}

Xu, Mingsheng ^{[1
]}

Luo, Xin ^{[1
]}

Wang, Liu ^{[1
]}

Sun, Jiuji ^{[1
]}

Dai, Jiacheng ^{[1
]}

Han, Jisheng ^{[1
]}

Xu, Xiangang ^{[1
]}

机构：

[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China

[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Seberang Perai 14300, Pulau Pinang, Malaysia

来源：

SOLID-STATE ELECTRONICS | 2024年 / 213卷

基金：

中国国家自然科学基金;

关键词：

InAlN/GaN HEMT; Electrical performance; Forming gas; Surface native oxide; Cutoff frequency; Si substrate; ALGAN/GAN HEMTS; GATE; INTERFACE; F(T)/F(MAX); HEMATITE; ALN;

D O I：

10.1016/j.sse.2024.108861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface electronic states and defects of gallium nitride based high -electron -mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H2/N2 annealing whereby the amount of Ga-O bonds is decreased. Compared with N2 annealing, an on -resistance of 1.68 omega & sdot;mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (fT/fmax) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.

引用

页数：5

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