Cryogenic Ferroelectric LiNbO3 Domain Wall Memory

被引：4

作者：

Hu, Di ^{[1
]}

Shen, Bo Wen ^{[1
]}

Sun, Jie ^{[1
]}

Li, Yi Ming ^{[1
]}

Jiang, An Quan ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 03期

关键词：

LiNbO3 single-crystal film; cryogenic; domain wall memory; on/off currents; retention; E HYSTERESIS LOOP;

D O I：

10.1109/LED.2023.3346891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Non-volatile memory devices have become crucial components in emerging fields like integrated circuits and quantum computing. However, their cryogenic use remains a challenge today. Here we fabricated ferroelectric domain wall memory devices using an X-cut LiNbO3 (LNO) thin film on silicon, and their on/off currents after the creation and erasure of conducting domain walls between two antiparallel/parallel domains were investigated at low temperatures. The readout current is sufficiently larger than 10 mu A , though the domain wall current decreases nearly by a half upon cooling of the device from 300 to 120 K. The cryogenic memory has a large on/off ratio (>10(4)) , long retention time (>10 years) and high endurance cycles (>10(9)) , and can be applied at extremely harsh environments.

引用

页码：380 / 383

页数：4

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