Probing photocarrier dynamics of pressurized graphene using time-resolved terahertz spectroscopy

被引:0
|
作者
Wang, Yunfeng [1 ,2 ]
Xu, Shujuan [1 ]
Yang, Jin [1 ]
Su, Fuhai [1 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China USTC, Hefei 230026, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
terahertz; photocarrier dynamics; graphene; high pressure; RAMAN-SPECTROSCOPY; BILAYER GRAPHENE; HOT CARRIERS; ULTRAFAST; CONDUCTIVITY; SINGLE; RELAXATION; TRANSITION; GENERATION; GAAS;
D O I
10.1088/1674-1056/acc2b1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Graphene hosts intriguing photocarrier dynamics such as negative transient terahertz (THz) photoconductivity, high electron temperature, benefiting from the unique linear Dirac dispersion. In this work, the pressure effects of photocarrier dynamics of graphene have been investigated using in situ time-resolved THz spectroscopy in combination with diamond anvil cell exceeding 9 GPa. We find that the negative THz conductivity maintains in our studied pressure range both for monolayer and bilayer graphene. In particular, the amplitude of THz photoconductivity in monolayer graphene manifests an extraordinary dropping with pressure, compared with that from the counterparts such as bulk silicon and bilayer graphene. Concomitantly, the time constant is reduced with increasing pressure, highlighting the pressure-induced hot carrier cooling. The pressure dependence of photocarrier dynamics in monolayer graphene is likely related with the enhancement of the interfacial coupling between diamond surface and sample, allowing for the activity of new electron-phonon scattering. Our work is expected to provide an impetus for the studies of high-pressure THz spectroscopy of two-dimensional materials.
引用
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页数:7
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