Non-Volatile III-V/Si Photonic Charge-Trap Flash Memory

被引：2

作者：

Cheung, Stanley ^{[1
]}

Yuan, Yuan ^{[1
]}

Peng, Yiwei ^{[1
]}

Hu, Yingtao ^{[1
]}

Kurczveil, Geza ^{[1
]}

Liang, Di ^{[1
]}

Beausoleil, Raymond G. ^{[1
]}

机构：

[1] Hewlett Packard Enterprise, Hewlett Packard Labs, Milpitas, CA 95035 USA

来源：

2023 IEEE PHOTONICS CONFERENCE, IPC | 2023年

关键词：

Silicon photonics; non-volatile; memory; heterogeneous;

D O I：

10.1109/IPC57732.2023.10360672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate, for the first time, non-volatile optical charge-trap memory (CTM) on a heterogeneous III-V/ Si integrated photonics platform. It is promising to co-locate computing and reliable data storage on the same photonic layer or elements to enable highly-integrated, energy-efficient, low-latency neuromorphic computing.

引用

页数：2

共 3 条

[1] An Energy-Efficient and Bandwidth-Scalable DWDM Heterogeneous Silicon Photonics Integration Platform [J].

Liang, Di ;

Srinivasan, Sudharsanan ;

Kurczveil, Geza ;

Tossoun, Bassem ;

Cheung, Stanley ;

Yuan, Yuan ;

Descos, Antoine ;

Hu, Yingtao ;

Huang, Zhihong ;

Sun, Peng ;

Van Vaerenbergh, Thomas ;

Zhang, Chong ;

Zeng, Xiaoge ;

Liu, Songtao ;

Bowers, John E. ;

Fiorentino, Marco ;

Beausoleil, Raymond G. .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 28 (06)

[2]

Song J.-F, Scientific Reports, P7

[3] Large-scale and energy-efficient tensorized optical neural networks on III-V-on-silicon MOSCAP platform [J].

Xiao, Xian ;

On, Mehmet Berkay ;

Van Vaerenbergh, Thomas ;

Liang, Di ;

Beausoleil, Raymond G. ;

Yoo, S. J. Ben .

APL PHOTONICS, 2021, 6 (12)

← 1 →